You may have to Search all our reviewed books and magazines, click the sign up button below to create a free account.
"Embark on a captivating journey through the enchanting realm of stories! Discover a flood of tales that wisk you away, from the wonder of becoming invisible to embarking on thrilling adventures alongside the charming characters nestled in a pencil box. Witness the epic quest of a girl as she searches for her new home, and indulge in beautifully crafted poems that will enchant you. Dive deep into intriguing mysteries and exciting capers, and experience magical fables filled with wonder and imagination"
None
Get ready for a SEPTEMBER to REMEMBER! Our special activity and story edition is packed with adventure,fun and surprises for children.
Get ready for a SEPTEMBER to REMEMBER! Our special activity and story edition is packed with adventure,fun and surprises for children.
This work has been selected by scholars as being culturally important, and is part of the knowledge base of civilization as we know it. This work is in the "public domain in the United States of America, and possibly other nations. Within the United States, you may freely copy and distribute this work, as no entity (individual or corporate) has a copyright on the body of the work. Scholars believe, and we concur, that this work is important enough to be preserved, reproduced, and made generally available to the public. We appreciate your support of the preservation process, and thank you for being an important part of keeping this knowledge alive and relevant.
This book provides comprehensive coverage of the materials characteristics, process technologies, and device operations for memory field-effect transistors employing inorganic or organic ferroelectric thin films. This transistor-type ferroelectric memory has interesting fundamental device physics and potentially large industrial impact. Among various applications of ferroelectric thin films, the development of nonvolatile ferroelectric random access memory (FeRAM) has been most actively progressed since the late 1980s and reached modest mass production for specific application since 1995. There are two types of memory cells in ferroelectric nonvolatile memories. One is the capacitor-type FeR...