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The Physics Behind Semiconductor Technology
This textbook teaches the physics and technology of semiconductors, highlighting the strong interdependence between the engineering principles and underlying physical fundamentals. It focuses on conveying a basic understanding of the physics, materials, and processes involved in semiconductor technology without relying on detailed derivations. The book features separate comments on the key physical principles covered, allowing the reader to quickly grasp the take-home message. Chapter-end questions and answers round out this compact book, making it a helpful and dependable resource for physicists, electrical engineers, and materials scientists working with electronic materials. Aimed at upper-level undergraduate students and written by an author with extensive experience in both industry and academia, this textbook gives physicists the opportunity to learn about the materials and technology behind semiconductors, while providing engineers and materials scientists a deeper understanding of the physics behind the technology.
Silicon Carbide
This book prestigiously covers our current understanding of SiC as a semiconductor material in electronics. Its physical properties make it more promising for high-powered devices than silicon. The volume is devoted to the material and covers methods of epitaxial and bulk growth. Identification and characterization of defects is discussed in detail. The contributions help the reader to develop a deeper understanding of defects by combining theoretical and experimental approaches. Apart from applications in power electronics, sensors, and NEMS, SiC has recently gained new interest as a substrate material for the manufacture of controlled graphene. SiC and graphene research is oriented towards end markets and has high impact on areas of rapidly growing interest like electric vehicles. The list of contributors reads like a "Who's Who" of the SiC community, strongly benefiting from collaborations between research institutions and enterprises active in SiC crystal growth and device development.
Organic and Inorganic Light Emitting Diodes
This book covers a comprehensive range of topics on the physical mechanisms of LEDs (light emitting diodes), scattering effects, challenges in fabrication and efficient enhancement techniques in organic and inorganic LEDs. It deals with various reliability issues in organic/inorganic LEDs like trapping and scattering effects, packaging failures, efficiency droops, irradiation effects, thermal degradation mechanisms, and thermal degradation processes. Features: Provides insights into the improvement of performance and reliability of LEDs Highlights the optical power improvement mechanisms in LEDs Covers the challenges in fabrication and packaging of LEDs Discusses pertinent failures and degradation mechanisms Includes droop minimization techniques This book is aimed at researchers and graduate students in LEDs, illumination engineering, optoelectronics, and polymer/organic materials.
Silicon Carbide and Related Materials 2007
Wide-bandgap semiconductors, such as silicon carbide and group-III nitrides have attracted increasing attention as promising target materials for high-power, high-frequency and high-temperature electronics use, as well as exploitation as short-wavelength light-emitters. Volume is indexed by Thomson Reuters CPCI-S (WoS).
Hoechst
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Silicon Carbide and Related Materials 2004
Silicon Carbide (SiC), Gallium Nitride (GaN) and Diamond are examples of wide-bandgap semiconductors having chemical, electrical and optical properties which make them very attractive for the fabrication of high-power and high-frequency electronic devices, as well as of light-emitters and sensors which have to operate under harsh conditions. The book comprises the proceedings of the 5th edition of the European Conference on Silicon Carbide and Related Materials, held from the 31st August to the 4th September 2004 in Bologna, Italy. This conference series here continued its tradition of being the main European forum for exchanging results, and discussing progress, between those university and...
