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Foundations of Analog and Digital Electronic Circuits
Unlike books currently on the market, this book attempts to satisfy two goals: combine circuits and electronics into a single, unified treatment, and establish a strong connection with the contemporary world of digital systems. It will introduce a new way of looking not only at the treatment of circuits, but also at the treatment of introductory coursework in engineering in general. Using the concept of ''abstraction,'' the book attempts to form a bridge between the world of physics and the world of large computer systems. In particular, it attempts to unify electrical engineering and computer science as the art of creating and exploiting successive abstractions to manage the complexity of b...
Advances in Silicon Carbide Processing and Applications
Learn the latest advances in SiC (Silicon Carbide) technology from the leading experts in the field with this new cutting-edge resource. The book is your single source for in-depth information on both SiC device fabrication and system-level applications. This comprehensive reference begins with an examination of how SiC is grown and how defects in SiC growth can affect working devices. Key issues in selective doping of SiC via ion implantation are covered with special focus on implant conditions and electrical activation of implants. SiC applications discussed include chemical sensors, motor-control components, high-temperature gas sensors, and high-temperature electronics. By cutting through the arcane data and jargon surrounding the hype on SiC, this book gives an honest assessment of today's SiC technology and shows you how SiC can be adopted in developing tomorrow's applications.
Cree Inc Patent Landscape Analysis – January 1, 1994 to December 31, 2013
The following analysis illustrates the underlying trends and relationships of U.S. issued patents of the subject company. The analysis employs two frequently used patent classification methods: US Patent Classification (UPC) and International Patent Classification (IPC). Aside from assisting patent examiners in determining the field of search for newly submitted patent applications, the two classification methods play a pivotal role in the characterization and analysis of technologies contained in collections of patent data. The analysis also includes the company’s most prolific inventors, top cited patents as well as foreign filings by technology area.
SiC Materials and Devices
Silicon carbide is known to have been investigated since 1907 when Captain H J Round demonstrated yellow and blue emission by applying bias between a metal needle and an SiC crystal. The potential of using SiC in semiconductor electronics was already recognized half a century ago. Despite its well-known properties, it has taken a few decades to overcome the exceptional technological difficulties of getting silicon carbide material to reach device quality and travel the road from basic research to commercialization.This second of two volumes reviews four important additional areas: the growth of SiC substrates; the deep defects in different SiC polytypes, which after many years of research still define the properties of bulk SiC and the performance and reliability of SiC devices; recent work on SiC JFETs; and the complex and controversial issues important for bipolar devices.Recognized leaders in the field, the contributors to this volume provide up-to-date reviews of further state-of-the-art areas in SiC technology and materials and device research.
Sic Materials And Devices - Volume 1
After many years of research and development, silicon carbide has emerged as one of the most important wide band gap semiconductors. The first commercial SiC devices — power switching Schottky diodes and high temperature MESFETs — are now on the market. This two-volume book gives a comprehensive, up-to-date review of silicon carbide materials properties and devices. With contributions by recognized leaders in SiC technology and materials and device research, SiC Materials and Devices is essential reading for technologists, scientists and engineers who are working on silicon carbide or other wide band gap materials and devices. The volumes can also be used as supplementary textbooks for graduate courses on silicon carbide and wide band gap semiconductor technology.
