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Carbon Nanotube Electronics
In recent years, carbon-based electronics have surfaced as potential candidates for substituting silicon-based logic as scaling continues into the new decade and beyond 20nm technology node. In particular, carbon nanotubes (CNTs) and graphene nanoribbons have received significant attention from the academia as well the industry. Ideal electronic and structural properties of these materials make them suitable for electronic applications. In this work we discuss the basics of CNT growth and device fabrication, explore performance and contact resistance for CNT Field Effect Transistors (CNFETs) based on horizontally-aligned grown CNTs. We provide a physics-based compact model for simulation of ...
Modeling of III-V Nanoscale Field-effect Transistors for Logic Circuits
As silicon CMOS technology continues to scale down its minimum critical dimension, it becomes increasingly difficult to enhance device switching speed due to fundamental limitations. Innovations in device structure and materials are pursued to accommodate improvement in performance as well as reduction in transistor size. For beyond-22-nm CMOS technology, III-V channel FETs are considered as a compelling candidate for extending the device scaling limit of low-power and high-speed operation, owing to their superb carrier transport properties and recent experimental advancements. In this thesis, device simulation, compact modeling, circuit design, circuit performance assessment and estimation ...
Scalability and Reliability of Phase Change Memory
Various memory devices are being widely used for a wide range of applications. There has not been any universal memory device so far because each memory device has a unique set of features. Large performance gaps in various dimensions of features between memory devices and a new set of features required by new electronic systems such as portable electronics open up new opportunities for new memory devices to emerge as mainstream memory devices. Besides, the imminent scaling limit for existing mainstream memory devices also motivates development and research of new memory devices which can meet the increasing demand for large memory capacity. Phase change memory (PCM) is one of the most promi...
Quantum Transport in One-dimensional Nanostructures
One-dimensional (1D) electronic nanostructures comprise a class of systems that boast tremendous promise for both technological innovation as well as fundamental scientific discovery. To fully harness their potential, it is crucial to understand transport through 1D systems at the most fundamental, quantum level. In this thesis, we describe our investigations down three avenues of quantum transport in 1D: (1) ballistic transport in quantum wires, (2) quantum capacitance measurements of nanostructures, and (3) tunneling measurements in carbon nanotubes. First, we discuss measurements and modeling of hole transport in ballistic quantum wires fabricated by GaAs/AlGaAs cleaved-edge overgrowth, w...
Carbon Nanotube Electronics
This book provides a complete overview of the field of carbon nanotube electronics. It covers materials and physical properties, synthesis and fabrication processes, devices and circuits, modeling, and finally novel applications of nanotube-based electronics. The book introduces fundamental device physics and circuit concepts of 1-D electronics. At the same time it provides specific examples of the state-of-the-art nanotube devices.
Major Applications of Carbon Nanotube Field-Effect Transistors (CNTFET)
With recent advancements in electronics, specifically nanoscale devices, new technologies are being implemented to improve the properties of automated systems. However, conventional materials are failing due to limited mobility, high leakage currents, and power dissipation. To mitigate these challenges, alternative resources are required to advance electronics further into the nanoscale domain. Carbon nanotube field-effect transistors are a potential solution yet lack the information and research to be properly utilized. Major Applications of Carbon Nanotube Field-Effect Transistors (CNTFET) is a collection of innovative research on the methods and applications of converting semiconductor de...
Light Metals—Advances in Research and Application: 2013 Edition
Light Metals—Advances in Research and Application: 2013 Edition is a ScholarlyBrief™ that delivers timely, authoritative, comprehensive, and specialized information about ZZZAdditional Research in a concise format. The editors have built Light Metals—Advances in Research and Application: 2013 Edition on the vast information databases of ScholarlyNews.™ You can expect the information about ZZZAdditional Research in this book to be deeper than what you can access anywhere else, as well as consistently reliable, authoritative, informed, and relevant. The content of Light Metals—Advances in Research and Application: 2013 Edition has been produced by the world’s leading scientists, engineers, analysts, research institutions, and companies. All of the content is from peer-reviewed sources, and all of it is written, assembled, and edited by the editors at ScholarlyEditions™ and available exclusively from us. You now have a source you can cite with authority, confidence, and credibility. More information is available at http://www.ScholarlyEditions.com/.
Carbon Nanotube Synthesis, Device Fabrication, and Circuit Design for Digital Logic Applications
Carbon Nanotube Field Effect Transistor (CNFET) technology has received a lot of attention in the past few years as a promising extension to silicon-CMOS for future digital logic integrated circuits. While recent research has advanced CNFET technology past many important milestones, robust and scalable solutions must be developed to realize the full potential of CNFETs. Thus, this thesis aims to develop a suite of techniques, spanning from material synthesis to circuit solutions, compatible with very-large-scale integration (VLSI). Specifically, to enable the real-world engineering of carbon nanotube integrated circuits, this thesis presents (1) wafer-scale aligned CNT growth, (2) wafer-scal...
Carbon Nanotube Electronics
In recent years, carbon-based electronics have surfaced as potential candidates for substituting silicon-based logic as scaling continues into the new decade and beyond 20nm technology node. In particular, carbon nanotubes (CNTs) and graphene nanoribbons have received significant attention from the academia as well the industry. Ideal electronic and structural properties of these materials make them suitable for electronic applications. In this work we discuss the basics of CNT growth and device fabrication, explore performance and contact resistance for CNT Field Effect Transistors (CNFETs) based on horizontally-aligned grown CNTs. We provide a physics-based compact model for simulation of ...
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