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Advances in Non-volatile Memory and Storage Technology
Advances in Nonvolatile Memory and Storage Technology, Second Edition, addresses recent developments in the non-volatile memory spectrum, from fundamental understanding, to technological aspects. The book provides up-to-date information on the current memory technologies as related by leading experts in both academia and industry. To reflect the rapidly changing field, many new chapters have been included to feature the latest in RRAM technology, STT-RAM, memristors and more. The new edition describes the emerging technologies including oxide-based ferroelectric memories, MRAM technologies, and 3D memory. Finally, to further widen the discussion on the applications space, neuromorphic comput...
Resistance Switching Mechanism in TiO2
Resistive Random Access Memory (ReRAM) has attracted significant attention recently, as it is now considered as the promising candidate for the next generation of non-volatile memory device, due to its high density, low operating power, fast switching speed, and compatibility with conventional CMOS process. Among many resistance switching materials, TiO2 has been widely studied. However, the most challenging issue is that the underlying switching mechanism is lacking in-depth understanding. It has been proposed that the resistance switching is strongly coupled with the presence and a preferential distribution of oxygen vacancies involving the formation of a conductive filament. Although many...
Understanding of NiO-based Unipolar Resistive Switching from First Principle Simulations to Macroscopic Models
As NAND Flash memory technology is facing challenging issues such as electronic coupling between adjacent cells and high coupling of the control gate with floating gate in scaling down to and beyond 16nm technology node, new functional devices or materials has been explored to continue consecutive development of memory technology beyond 16nm technology node. One of the new emerging non-volatile memories is resistance change random access memory(ReRAM) possibly meeting the requirements to replace NAND Flash; i.e., low cost, simple structure, promising 8nm technology node, low power dissipation, high endurance, possible integration in crossbar arrays in 3D on top of silicon base CMOS ICs. In R...
Materials and Physics for Nonvolatile Memories: Volume 1160
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
Advances in Non-volatile Memory and Storage Technology
New solutions are needed for future scaling down of nonvolatile memory. Advances in Non-volatile Memory and Storage Technology provides an overview of developing technologies and explores their strengths and weaknesses. After an overview of the current market, part one introduces improvements in flash technologies, including developments in 3D NAND flash technologies and flash memory for ultra-high density storage devices. Part two looks at the advantages of designing phase change memory and resistive random access memory technologies. It looks in particular at the fabrication, properties, and performance of nanowire phase change memory technologies. Later chapters also consider modeling of ...
Classical and Quantum Dynamics in Condensed Phase Simulations
The school held at Villa Marigola, Lerici, Italy, in July 1997 was very much an educational experiment aimed not just at teaching a new generation of students the latest developments in computer simulation methods and theory, but also at bringing together researchers from the condensed matter computer simulation community, the biophysical chemistry community and the quantum dynamics community to confront the shared problem: the development of methods to treat the dynamics of quantum condensed phase systems. This volume collects the lectures delivered there. Due to the focus of the school, the contributions divide along natural lines into two broad groups: (1) the most sophisticated forms of ...
Complex Inorganic Solids
One of the key aspects of this volume is to cut across the traditional taxonomy of disciplines in the study of alloys. Hence there has been a deliberate attempt to integrate the different approaches taken towards alloys as a class of materials in different fields, ranging from geology to metallurgical engineering. The emphasis of this book is to highlight commonalities between different fields with respect to how alloys are studied. The topics in this book fall into several themes, which suggest a number of different classification schemes. We have chosen a scheme that classifies the papers in the volume into the categories Microstructural Considerations, Ordering, Kinetics and Diffusion, Magnetic Considerations and Elastic Considerations. The book has juxtaposed apparently disparate approaches to similar physical processes, in the hope of revealing a more dynamic character of the processes under consideration. This monograph will invigorate new kinds of discussion and reveal challenges and new avenues to the description and prediction of properties of materials in the solid state and the conditions that produce them.
Transition Metal Oxides
Transition metal oxides form a series of compounds with a uniquely wide range of electronic properties. The main aim of this book is to describe the varied electronic behaviour shown by transition metal oxides, and to discuss the different types of theoretical models that have been proposed to interpret this behaviour.
