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Computational Single-Electronics
From the reviews: "This is a well written book offering a clear and detailed insight into physical processes and numerical procedures essential to the single-electron dynamics in electro-conducting media." Zentralblatt für Mathematik und ihre Grenzgebiete
Frontiers of Engineering
This volume includes 14 papers from the National Academy of Engineering's Ninth Annual U.S. Frontiers of Engineering Symposium held in September 2003. The U.S. Frontiers meeting brings together 100 outstanding engineers (ages 30-45) to learn from their peers and discuss leading-edge technologies in a range of fields. The 2003 symposium covered these four areas: environmental engineering; fundamental limits of nanotechnology; counterterrorism technologies and infrastructure protection; and biomolecular computing. Papers in the book cover topics such as microbial mineral respiration; water-resource engineering, economics, and public policy; frontiers of silicon CMOS technology; molecular elect...
Transport in Nanostructures
A comprehensive, detailed description of the properties and behaviour of mesoscopic devices.
Adaptive Computing in Design and Manufacture V
The Adaptive Computing in Design and Manufacture Conference series is now in its tenth year and has become a well-established, application-oriented meeting recognised by several UK Engineering Institutions and the International Society of Genetic and Evolutionary Computing. The main theme of the conference again relates to the integration of evolutionary and adaptive computing technologies with design and manufacturing processes whilst also taking into account complementary advanced computing technologies. Evolutionary and adaptive computing techniques continue to increase their penetration of industrial and commercial practice as their powerful search, exploration and optimisation capabilit...
Transport in Nanostructures
The advent of semiconductor structures whose characteristic dimensions are smaller than the mean free path of carriers has led to the development of novel devices, and advances in theoretical understanding of mesoscopic systems or nanostructures. This book has been thoroughly revised and provides a much-needed update on the very latest experimental research into mesoscopic devices and develops a detailed theoretical framework for understanding their behaviour. Beginning with the key observable phenomena in nanostructures, the authors describe quantum confined systems, transmission in nanostructures, quantum dots, and single electron phenomena. Separate chapters are devoted to interference in diffusive transport, temperature decay of fluctuations, and non-equilibrium transport and nanodevices. Throughout the book, the authors interweave experimental results with the appropriate theoretical formalism. The book will be of great interest to graduate students taking courses in mesoscopic physics or nanoelectronics, and researchers working on semiconductor nanostructures.
Intrinsic Point Defects, Impurities, and Their Diffusion in Silicon
This book contains the first comprehensive review of intrinsic point defects, impurities and their complexes in silicon. Besides compiling the structures, energetic properties, identified electrical levels and spectroscopic signatures, and the diffusion behaviour from investigations, it gives a comprehensive introduction into the relevant fundamental concepts.
Analysis and Simulation of Heterostructure Devices
The topic of this monograph is the physical modeling of heterostructure devices. A detailed discussion of physical models and parameters for compound semiconductors is presented including the relevant aspects of modern submicron heterostructure devices. More than 25 simulation examples for different types of Si(Ge)-based, GaAs-based, InP-based, and GaN-based heterostructure bipolar transistors (HBTs) and high electron mobility transistors (HEMTs) are given in comparison with experimental data from state-of-the-art devices.
