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Smart system for invasive measurement of biomedical parameters
Permanent monitoring of blood pressure helps in diagnosis and tracking progress of medical interventions. This dissertation details the design, fabrication and implementation of tiny wirelessly powered implant devices for detection of endoleaks and occlusion occurring in stent grafts used for treatment of Abdominal Aortic Aneurysm (AAA) and portal hypertension (due to liver cirrhosis). Custom fabricated low-power application-specific integrated circuit (ASIC) together with pressure sensors and telemetry units for wireless power reception and data transmission form an implant device. Using wireless inductive telemetry links, these devices achieved a wireless range of 20 cm.
3-Dimensional Process Simulation
Whereas two-dimensional semiconductor process simulation has achieved a certain degree of maturity, three-dimensional process simulation is a newly emerging field in which most efforts are dedicated to necessary basic developments. Research in this area is promoted by the growing demand to obtain reliable information on device geometries and dopant distributions needed for three-dimensional device simulation, and challenged by the great algorithmic problems caused by moving interfaces and by the requirement to limit computation times and memory requirements. A workshop (Erlangen, September 5, 1995) provided a forum to discuss the industrial needs, technical problems, and solutions being developed in the field of three-dimensional semiconductor process simulation. Invited presentations from leading semiconductor companies and research Centers of Excellence from Japan, the USA, and Europe outlined novel numerical algorithms, physical models, and applications in this rapidly emerging field.
Hierarchical Device Simulation
This monograph is the first on physics-based simulations of novel strained Si and SiGe devices. It provides an in-depth description of the full-band monte-carlo method for SiGe and discusses the common theoretical background of the drift-diffusion, hydrodynamic and Monte-Carlo models and their synergy.
Biomedical Engineering Systems and Technologies
This book constitutes the thoroughly refereed post-conference proceedings of the 4th International Joint Conference on Biomedical Engineering Systems and Technologies, BIOSTEC 2011, held in Rome, Italy, in January 2011. The 27 revised full papers presented together with one invited lecture were carefully reviewed and selected from a total of 538 submissions. The papers cover a wide range of topics and are organized in four general topical sections on biomedical electronics and devices; bioinformatics models, methods and algorithms; bio-inspired systems and signal processing; health informatics.
Simulation of Semiconductor Processes and Devices 2001
This volume contains the Proceedings of the International Conference on Simulation of Semiconductor Devices and Processes, SISPAD 01, held on September 5–7, 2001, in Athens. The conference provided an open forum for the presentation of the latest results and trends in process and device simulation. The trend towards shrinking device dimensions and increasing complexity in process technology demands the continuous development of advanced models describing basic physical phenomena involved. New simulation tools are developed to complete the hierarchy in the Technology Computer Aided Design simulation chain between microscopic and macroscopic approaches. The conference program featured 8 invited papers, 60 papers for oral presentation and 34 papers for poster presentation, selected from a total of 165 abstracts from 30 countries around the world. These papers disclose new and interesting concepts for simulating processes and devices.
Analysis and Simulation of Heterostructure Devices
The topic of this monograph is the physical modeling of heterostructure devices. A detailed discussion of physical models and parameters for compound semiconductors is presented including the relevant aspects of modern submicron heterostructure devices. More than 25 simulation examples for different types of Si(Ge)-based, GaAs-based, InP-based, and GaN-based heterostructure bipolar transistors (HBTs) and high electron mobility transistors (HEMTs) are given in comparison with experimental data from state-of-the-art devices.
Implant System for the Recording of Internal Muscle Activity to Control a Hand Prosthesis
An implantable system to invasively acquire muscle activity for controlling a bionic hand prosthesis is presented. The system utilizes two wireless interfaces for data and power transmission. Furthermore, a multichannel custom made low-power application specific integrated circuit (ASIC) was designed in 130 nm technology to amplify, filter and digitize the analogue muscle-activity. A trade-off between power consumption, silicon area and noise was considered during the design phase. The implant system was successfully tested by several animal experiments (sheep and rhesus macaques). The invasively recorded muscle activity possesses a higher amplitude, higher selectivity and more stability than its surface recorded counterpart. It provides an opportunity for simple and smooth control of a hand prosthetic system with high number of degrees of freedom.
Intrinsic Point Defects, Impurities, and Their Diffusion in Silicon
This book contains the first comprehensive review of intrinsic point defects, impurities and their complexes in silicon. Besides compiling the structures, energetic properties, identified electrical levels and spectroscopic signatures, and the diffusion behaviour from investigations, it gives a comprehensive introduction into the relevant fundamental concepts.
Simulation of Semiconductor Processes and Devices 2004
This volume contains the proceedings of the 10th edition of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2004), held in Munich, Germany, on September 2-4, 2004. The conference program included 7 invited plenary lectures and 82 contributed papers for oral or poster presentation, which were carefully selected out of a total of 151 abstracts submitted from 14 countries around the world. Like the previous meetings, SISPAD 2004 provided a world-wide forum for the presentation and discussion of recent advances and developments in the theoretical description, physical modeling and numerical simulation and analysis of semiconductor fabrication processes, device operation and system performance. The variety of topics covered by the conference contributions reflects the physical effects and technological problems encountered in consequence of the progressively shrinking device dimensions and the ever-growing complexity in device technology.
Progress in Industrial Mathematics at ECMI 2018
This book explores mathematics in a wide variety of applications, ranging from problems in electronics, energy and the environment, to mechanics and mechatronics. The book gathers 81 contributions submitted to the 20th European Conference on Mathematics for Industry, ECMI 2018, which was held in Budapest, Hungary in June 2018. The application areas include: Applied Physics, Biology and Medicine, Cybersecurity, Data Science, Economics, Finance and Insurance, Energy, Production Systems, Social Challenges, and Vehicles and Transportation. In turn, the mathematical technologies discussed include: Combinatorial Optimization, Cooperative Games, Delay Differential Equations, Finite Elements, Hamilt...
