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"Electronics, Dielectric Science and Technology, and High Temperature Materials Divisions."
Issues relating to the high-K gate dielectric are among the greatest challenges for the evolving International Technology Roadmap for Semiconductors (ITRS). More than just an historical overview, this book will assess previous and present approaches related to scaling the gate dielectric and their impact, along with the creative directions and forthcoming challenges that will define the future of gate dielectric scaling technology. Topics include: an extensive review of Moore's Law, the classical regime for SiO2 gate dielectrics; the transition to silicon oxynitride gate dielectrics; the transition to high-K gate dielectrics (including the drive towards equivalent oxide thickness in the single-digit nanometer regime); and future directions and issues for ultimate technology generation scaling. The vision, wisdom, and experience of the team of authors will make this book a timely, relevant, and interesting, resource focusing on fundamentals of the 45 nm Technology Generation and beyond.
Silicon is the most important material for the electronics industry. In modern microelectronics silicon devices like diodes and transistors play a major role, and devices like photodetectors or solar cells gain ever more importance. This concise handbook deals with one of the most important topics for the electronics industry. World renowned authors have contributed to this unique overview of the processing of silicon and silicon devices.
A comprehensive overview, from fundamental theory and numerical methods to the design of real plasmonic structures for nanoelectronic and sensing applications.
This issue covers, in detail, all aspects of the physics and the technology of high dielectric constant gate stacks, including high mobility substrates, high dielectric constant materials, processing, metals for gate electrodes, interfaces, physical, chemical, and electrical characterization, gate stack reliability, and DRAM and non-volatile memories.
The proceedings from this May 2000 symposium illustrate the range of applications in Rapid Thermal Processing (RTP). The refereed papers cover a variety of issues, such as ultra-shallow junctions; contacts for nanoscale CMOS; gate stacks; new applications of RTP, such as for the enhanced crystalization of amorphous silicon thin films; and advances on RTP systems and process monitoring, including optimizing and controlling gas flows in an RTCVD reactor. Most presentations are supported by charts and other graphical data. c. Book News Inc.
Despite initial set backs in the 1980s, the prospect for large scale integration of optical devices with high spatial-density and low energy consumption for information applications has grown steadily in the past decade. At the same time these advances have been made towards classical information processing with integrated optics, largely in an engineering context, a broad physics community has been pursuing quantum information processing platforms, with a heavy emphasis on optics-based networks. But despite these similarities, the two communities have exchanged models and techniques to a very limited degree. The aim of this thesis is to provide examples of the advantages of an engineering p...