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Molecular Beam Epitaxy
This first-ever monograph on molecular beam epitaxy (MBE) gives a comprehensive presentation of recent developments in MBE, as applied to crystallization of thin films and device structures of different semiconductor materials. MBE is a high-vacuum technology characterized by relatively low growth temperature, ability to cease or initiate growth abruptly, smoothing of grown surfaces and interfaces on an atomic scale, and the unique facility for in situ analysis of the structural parameters of the growing film. The excellent exploitation parameters of such MBE-produced devices as quantum-well lasers, high electron mobility transistors, and superlattice avalanche photodiodes have caused this t...
Physics and Engineering of New Materials
This book presents the majority of the contributions to the Tenth German-Vietnamese Seminar on Physics and Engineering (GVS10) that took place in the Gustav- Stresemann-Institut (GSI) in Bonn from June 6 to June 9, 2007. In the focus of these studies are the preparation and basic properties of new material systems, related investigation methods, and practical applications. Accordingly the sections in this book are entitled electrons: transport and confinement, low-dimensional systems, magnetism, oxidic materials, organic films, new materials, and methods. The series of German-Vietnamese seminars was initiated and sponsored by the Gottlieb Daimler- and Karl Benz -Foundation since 1998 and too...
Solid-State Physics
This new edition of the well-received introduction to solid-state physics provides a comprehensive overview of the basic theoretical and experimental concepts of materials science. Experimental aspects and laboratory details are highlighted in separate panels that enrich text and emphasize recent developments. Notably, new material in the third edition includes sections on important new devices, aspects of non- periodic structures of matter, phase transitions, defects, superconductors and nanostructures. Students will benefit significantly from solving the exercises given at the end of each chapter. This book is intended for university students in physics, materials science and electrical engineering. It has been thoroughly updated to maintain its relevance and usefulness to students and professionals.
Low Temperature Epitaxial Growth of Semiconductors
Low temperature processes for semiconductors have been recently under intensive development to fabricate controlled device structures with minute dimensions in order to achieve the highest device performance and new device functions as well as high integration density. Comprising reviews by experts long involved in the respective pioneering work, this volume makes a useful contribution toward maturing the process of low temperature epitaxy as a whole.
Secondary Ion Mass Spectrometry SIMS V
This volume contains the proceedings of the Fifth International Confer ence on Secondary Ion Mass Spectrometry (SIMS V), held at the Capitol Holiday Inn, Washington, DC, USA, from September 30 to October 4, 1985. The conference was the fifth in a series of conferences held bienni ally. Previous conferences were held in Miinster (1977), Stanford (1979), Budapest (1981), and Osaka (1983). SIMS V was organized by Dr. R.J. Colton of the Nayal Research Lab oratory and Dr. D.S. Simons of the National Bureau of Standards un der the auspices of the International Organizing Committee chaired by Prof. A. Benninghoven of the Universitat Miinster. Dr. Richard F.K. Herzog served as the honorary chairman ...
Crystal Growth in Science and Technology
Science and art of crystal growth represent an interdisciplinary activity based on fundamental principles of physics, chemistry and crystallography. Crystal growth has contributed over the years essentially to a widening of knowledge in its basic disciplines and has penetrated practically into all fields of experimental natural sciences. It has acted, more over, in a steadily increasing manner as a link between science and technology as can be seen best, for example, from the achievements in modern microelectronics. The aim of the course "Crystal Growth in Science and Technology" being to stress the interdisciplinary character of the subject, selected fundamental principles are reviewed in t...
