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Materials and Reliability Handbook for Semiconductor Optical and Electron Devices provides comprehensive coverage of reliability procedures and approaches for electron and photonic devices. These include lasers and high speed electronics used in cell phones, satellites, data transmission systems and displays. Lifetime predictions for compound semiconductor devices are notoriously inaccurate due to the absence of standard protocols. Manufacturers have relied on extrapolation back to room temperature of accelerated testing at elevated temperature. This technique fails for scaled, high current density devices. Device failure is driven by electric field or current mechanisms or low activation en...
This book is a printed edition of the Special Issue "Photon-Counting Image Sensors" that was published in Sensors
Nanobiomaterials exhibit distinctive characteristics, including mechanical, electrical, and optical properties, which make them suitable for a variety of biological applications. Because of their versatility, they are poised to play a central role in nanobiotechnology and make significant contributions to biomedical research and healthcare. Nanobio
Comprehensive in scope, this book covers the latest progresses of theories, technologies and applications of LEDs based on III-V semiconductor materials, such as basic material physics, key device issues (homoepitaxy and heteroepitaxy of the materials on different substrates, quantum efficiency and novel structures, and more), packaging, and system integration. The authors describe the latest developments of LEDs with spectra coverage from ultra-violet (UV) to the entire visible light wavelength. The major aspects of LEDs, such as material growth, chip structure, packaging, and reliability are covered, as well as emerging and novel applications beyond the general and conventional lightings. ...
Silicon-based microelectronics has steadily improved in various performance-to-cost metrics. But after decades of processor scaling, fundamental limitations and considerable new challenges have emerged. The integration of compound semiconductors is the leading candidate to address many of these issues and to continue the relentless pursuit of more
Semiconductors and Semimetals, Volume 111 highlights new advances in the field, with this new volume presenting interesting chapters on Precision Medicine. Each chapter is written by an international board of authors. - Provides the authority and expertise of leading contributors from an international board of authors - Presents the latest release in the Semiconductors and Semimetals series - Updated release includes the latest information on Topological Insulator and Related Topics
This compendium reports fundamental science and engineering advances of the US Army Research Labratory (ARL) within the area of Energy and Power technologies. Although, in general, ARL's Materials Research encompasses a broad range of materials technologies (e.g.: Photonics, Electronics, Biological and Bio-inspired Materials, Structural Materials, High Strain and Ballistic Materials, and Manufacturing Science), this publication specifically addresses selected energy and power material related work at ARL. While this work includes electrochemical energy storage (batteries and capacitors) and electrochemical energy conversion (fuel cells, photoelectrochemistry, and photochemistry), special emp...
Group III-Nitrides semiconductor materials, including GaN, InN, AlN, InGaN, AlGaN and AlInGaN, i.e. (Al, In, Ga)N, are excellent semiconductors, covering the spectral range from deep ultraviolet (DUV) to UV, visible and infrared, with unique properties very suitable for modern electronic and optoelectronic applications. Remarkable breakthroughs have been achieved in recent years for research and development (R&D) in these materials and devices, such as high-power and high brightness UV-blue-green-white light emitting diodes (LEDs), UV-blue-green laser diodes (LDs), photo-detectors and various optoelectronics and electronics devices and applications.The Nobel Prize in Physics 2014 was awarded...
This dissertation employs doping to investigate basic gallium nitride (GaN) crystal properties and to solve challenges of the hydride vapour phase epitaxy (HVPE) growth process. Whereas the first chapter is a short introduction to the history of the GaN single crystal growth, the 2nd chapter introduces to current crystal growth techniques, discusses properties of the GaN material system and the resulting influence on the applicable crystal growth techniques. HVPE, as a vapour phase epitaxy crystal growth method will be explained in greater detail, with focus on the used vertical reactor and its capabilities for doping. The 3rd chapter then focusses on point defects in GaN, specifically on in...
This volume presents state-of-the-art works from top academic and research institutions in the areas of high performance semiconductor materials, devices, and circuits. A broad coverage of topics relating to high performance devices and circuits is featured here. There are 46 contributed papers covering a wide range of materials, device types, and applications. These papers describe the results of ongoing research in three general areas: high speed technologies for advanced mixed signal and terahertz applications, advanced technologies for high performance optical links and light sources, and high power density and high efficiency technologies for next generation microwave front ends and power electronics.