Welcome to our book review site go-pdf.online!
You may have to Search all our reviewed books and magazines, click the sign up button below to create a free account.
Springer Handbook of Semiconductor Devices
This Springer Handbook comprehensively covers the topic of semiconductor devices, embracing all aspects from theoretical background to fabrication, modeling, and applications. Nearly 100 leading scientists from industry and academia were selected to write the handbook's chapters, which were conceived for professionals and practitioners, material scientists, physicists and electrical engineers working at universities, industrial R&D, and manufacturers. Starting from the description of the relevant technological aspects and fabrication steps, the handbook proceeds with a section fully devoted to the main conventional semiconductor devices like, e.g., bipolar transistors and MOS capacitors and ...
Modeling Nanowire and Double-Gate Junctionless Field-Effect Transistors
A detailed introduction to the design, modeling, and operation of junctionless field effect transistors (FETs), including advantages and limitations.
Modeling Nanowire and Double-Gate Junctionless Field-Effect Transistors
The first book on the topic, this is a comprehensive introduction to the modeling and design of junctionless field effect transistors (FETs). Beginning with a discussion of the advantages and limitations of the technology, the authors also provide a thorough overview of published analytical models for double-gate and nanowire configurations, before offering a general introduction to the EPFL charge-based model of junctionless FETs. Important features are introduced gradually, including nanowire versus double-gate equivalence, technological design space, junctionless FET performances, short channel effects, transcapacitances, asymmetric operation, thermal noise, interface traps, and the junction FET. Additional features compatible with biosensor applications are also discussed. This is a valuable resource for students and researchers looking to understand more about this new and fast developing field.
Cryptography
Despite being 2000 years old, cryptography is still a very active field of research. New needs and application fields, like privacy, the Internet of Things (IoT), physically unclonable functions (PUFs), post-quantum cryptography, and quantum key distribution, will keep fueling the work in this field. This book discusses quantum cryptography, lightweight cryptography for IoT, PUFs, cryptanalysis, and more. It provides a snapshot of some recent research results in the field, providing readers with some useful tools and stimulating new ideas and applications for future investigation.
Nanowire Transistors
A self-contained and up-to-date account of the current developments in the physics and technology of nanowire semiconductor devices.
Charge-Based MOS Transistor Modeling
Modern, large-scale analog integrated circuits (ICs) are essentially composed of metal-oxide semiconductor (MOS) transistors and their interconnections. As technology scales down to deep sub-micron dimensions and supply voltage decreases to reduce power consumption, these complex analog circuits are even more dependent on the exact behavior of each transistor. High-performance analog circuit design requires a very detailed model of the transistor, describing accurately its static and dynamic behaviors, its noise and matching limitations and its temperature variations. The charge-based EKV (Enz-Krummenacher-Vittoz) MOS transistor model for IC design has been developed to provide a clear under...
Systematic Design of Analog CMOS Circuits
This hands-on guide contains a fresh approach to efficient and insight-driven integrated circuit design in nanoscale-CMOS. With downloadable MATLAB code and over forty detailed worked examples, this is essential reading for professional engineers, researchers, and graduate students in analog circuit design.
2021 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EuroSOI ULIS)
The seventh joint EUROSOI ULIS conference will be hosted by Normandy University in Caen The focus of the sessions is on advanced nanoscale devices, including SOI technology Papers in the following areas are solicited Physical mechanisms and innovative SOI like devices New channel materials for CMOS strained Si, strained SOI, SiGe, GeOI, III V and high mobility materials on insulator carbon nanotubes graphene and other two dimensional materials Nanometer scale devices technology, characterization techniques and evaluation metrics for high performance, low power, low standby power, high frequency and memory applications New functionalities in silicon compatible nanostructures and innovative devices representing the More than Moore domain nanoelectronic sensors, biosensor devices, energy harvesting devices, RF devices, imagers, etc Advanced test structures and characterization techniques,reliability and variability assessment techniques for new materials and novel devices
Mosfet Modeling For Circuit Analysis And Design
This is the first book dedicated to the next generation of MOSFET models. Addressed to circuit designers with an in-depth treatment that appeals to device specialists, the book presents a fresh view of compact modeling, having completely abandoned the regional modeling approach.Both an overview of the basic physics theory required to build compact MOSFET models and a unified treatment of inversion-charge and surface-potential models are provided. The needs of digital, analog and RF designers as regards the availability of simple equations for circuit designs are taken into account. Compact expressions for hand analysis or for automatic synthesis, valid in all operating regions, are presented throughout the book. All the main expressions for computer simulation used in the new generation compact models are derived.Since designers in advanced technologies are increasingly concerned with fluctuations, the modeling of fluctuations is strongly emphasized. A unified approach for both space (matching) and time (noise) fluctuations is introduced.
Ultra Low Noise CMOS Image Sensors
This thesis provides a thorough noise analysis for conventional CIS readout chains, while also presenting and discussing a variety of noise reduction techniques that allow the read noise in standard processes to be optimized. Two physical implementations featuring sub-0.5-electron RMS are subsequently presented to verify the proposed noise reduction techniques and provide a full characterization of a VGA imager. Based on the verified noise calculation, the impact of the technology downscaling on the input-referred noise is also studied. Further, the thesis covers THz CMOS image sensors and presents an original design that achieves ultra-low-noise performance. Last but not least, it provides a comprehensive review of CMOS image sensors.
