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Simulation of Semiconductor Devices and Processes
  • Language: en
  • Pages: 515

Simulation of Semiconductor Devices and Processes

SISDEP ’95 provides an international forum for the presentation of state-of-the-art research and development results in the area of numerical process and device simulation. Continuously shrinking device dimensions, the use of new materials, and advanced processing steps in the manufacturing of semiconductor devices require new and improved software. The trend towards increasing complexity in structures and process technology demands advanced models describing all basic effects and sophisticated two and three dimensional tools for almost arbitrarily designed geometries. The book contains the latest results obtained by scientists from more than 20 countries on process simulation and modeling, simulation of process equipment, device modeling and simulation of novel devices, power semiconductors, and sensors, on device simulation and parameter extraction for circuit models, practical application of simulation, numerical methods, and software.

The Physics and Chemistry of SiO2 and the Si-SiO2 Interface-3, 1996
  • Language: en
  • Pages: 804

The Physics and Chemistry of SiO2 and the Si-SiO2 Interface-3, 1996

  • Type: Book
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  • Published: 1996
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  • Publisher: Unknown

None

Advances in Electronics and Electron Physics
  • Language: en
  • Pages: 429

Advances in Electronics and Electron Physics

Advances in Electronics and Electron Physics

Silicon Carbide
  • Language: en
  • Pages: 528

Silicon Carbide

This book prestigiously covers our current understanding of SiC as a semiconductor material in electronics. Its physical properties make it more promising for high-powered devices than silicon. The volume is devoted to the material and covers methods of epitaxial and bulk growth. Identification and characterization of defects is discussed in detail. The contributions help the reader to develop a deeper understanding of defects by combining theoretical and experimental approaches. Apart from applications in power electronics, sensors, and NEMS, SiC has recently gained new interest as a substrate material for the manufacture of controlled graphene. SiC and graphene research is oriented towards end markets and has high impact on areas of rapidly growing interest like electric vehicles. The list of contributors reads like a "Who's Who" of the SiC community, strongly benefiting from collaborations between research institutions and enterprises active in SiC crystal growth and device development.

Proceedings of the Fifth Symposium on Automated Integrated Circuits Manufacturing
  • Language: en
  • Pages: 302

Proceedings of the Fifth Symposium on Automated Integrated Circuits Manufacturing

  • Type: Book
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  • Published: 1990
  • -
  • Publisher: Unknown

None

Official Gazette of the United States Patent and Trademark Office
  • Language: en
  • Pages: 1474

Official Gazette of the United States Patent and Trademark Office

  • Type: Book
  • -
  • Published: 2000
  • -
  • Publisher: Unknown

None

Ion Implantation Science and Technology
  • Language: en
  • Pages: 649

Ion Implantation Science and Technology

  • Type: Book
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  • Published: 2012-12-02
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  • Publisher: Elsevier

Ion Implantation: Science and Technology serves as both an introduction to and tutorial on the science, techniques, and machines involved in ion implantation. The book is divided into two parts. Part 1 discusses topics such as the history of the ion implantation; the different types and purposes of ion implanters; the penetration of energetic ions into solids; damage annealing in silicon; and ion implantation metallurgy. Part 2 covers areas such as ion implementation system concepts; ion sources; underlying principles related to ion optics; and safety and radiation considerations in ion implantation. The text is recommended for engineers who would like to be acquainted with the principles and processes behind ion implantation or make studies on the field.

Gallium-Nitride (GaN) II
  • Language: en
  • Pages: 509

Gallium-Nitride (GaN) II

Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribut...

Germanium Silicon: Physics and Materials
  • Language: en
  • Pages: 459

Germanium Silicon: Physics and Materials

Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribut...

Cumulative Subject and Author Index Including Tables of Contents, Volumes 1-50
  • Language: en
  • Pages: 445

Cumulative Subject and Author Index Including Tables of Contents, Volumes 1-50

Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribut...