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Advances in Electronics and Electron Physics
Advances in Electronics and Electron Physics
Process and Device Simulation for MOS-VLSI Circuits
P. Antognetti University of Genova, Italy Director of the NATO ASI The key importance of VLSI circuits is shown by the national efforts in this field taking place in several countries at differ ent levels (government agencies, private industries, defense de partments). As a result of the evolution of IC technology over the past two decades, component complexi ty has increased from one single to over 400,000 transistor functions per chip. Low cost of such single chip systems is only possible by reducing design cost per function and avoiding cost penalties for design errors. Therefore, computer simulation tools, at all levels of the design process, have become an absolute necessity and a corne...
Identification of Defects in Semiconductors
Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors.The"Willardson and Beer"Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute t...
Ion Implantation Science and Technology
Ion Implantation: Science and Technology serves as both an introduction to and tutorial on the science, techniques, and machines involved in ion implantation. The book is divided into two parts. Part 1 discusses topics such as the history of the ion implantation; the different types and purposes of ion implanters; the penetration of energetic ions into solids; damage annealing in silicon; and ion implantation metallurgy. Part 2 covers areas such as ion implementation system concepts; ion sources; underlying principles related to ion optics; and safety and radiation considerations in ion implantation. The text is recommended for engineers who would like to be acquainted with the principles and processes behind ion implantation or make studies on the field.
Effect of Disorder and Defects in Ion-Implanted Semiconductors: Electrical and Physiochemical Characterization
Defects in ion-implanted semiconductors are important and will likely gain increased importance in the future as annealing temperatures are reduced with successive IC generations. Novel implant approaches, such as MdV implantation, create new types of defects whose origin and annealing characteristics will need to be addressed. Publications in this field mainly focus on the effects of ion implantation on the material and the modification in the implanted layer afterhigh temperature annealing. Electrical and Physicochemical Characterization focuses on the physics of the annealing kinetics of the damaged layer. An overview of characterization tehniques and a critical comparison of the information on annealing kinetics is also presented. - Provides basic knowledge of ion implantation-induced defects - Focuses on physical mechanisms of defect annealing - Utilizes electrical and physico-chemical characterization tools for processed semiconductors - Provides the basis for understanding the problems caused by the defects generated by implantation and the means for their characterization and elimination
Uncooled Infrared Imaging Arrays and Systems
This is the first book to describe an emerging but already growing technology of thermal imaging based on uncooled infrared imaging arrays and systems, which are the most exciting new developments in infrared technology today. This technology is of great importance to developers and users of thermal images for military and commercial applications. The chapters, prepared by world leaders in the technology, describe not only the mainstream efforts, but also exciting new approaches and fundamental limits applicable to all. - Unified approach to technology development based on fundamental limits - Individual chapters written by world leaders in each technology - Novel potential approaches, allowing for the reduction of costs, described in detail - Descriptive and analytical - Provides details of the mainstream approaches--resistive bolometric, pyroelectric/field enhanced pyroelectric, thermoelectric - Provides insight into a unified approach to development of all types of thermal imaging arrays Features state-of-the-art and selected new developments
Ultrathin Calcium Titanate Capacitors
To enable further scaling for future generations of DRAM capacitors, significant efforts to replace Zirconium dioxide as high-k dielectric have been undertaken since the 1990s. In calculations, Calcium titanate has been identified as a potential replacement to allow a significant capacitance improvement. This material exhibits a significantly higher permittivity and a sufficient band gap. The scope of this thesis is therefore the preparation and detailed physical and electrical characterization of ultrathin Calcium titanate layers. The complete capacitor stacks including Calcium titanate have been prepared under ultrahigh vacuum to minimize the influence of adsorbents or contaminants at the ...
Silicon Carbide
This book prestigiously covers our current understanding of SiC as a semiconductor material in electronics. Its physical properties make it more promising for high-powered devices than silicon. The volume is devoted to the material and covers methods of epitaxial and bulk growth. Identification and characterization of defects is discussed in detail. The contributions help the reader to develop a deeper understanding of defects by combining theoretical and experimental approaches. Apart from applications in power electronics, sensors, and NEMS, SiC has recently gained new interest as a substrate material for the manufacture of controlled graphene. SiC and graphene research is oriented towards end markets and has high impact on areas of rapidly growing interest like electric vehicles. The list of contributors reads like a "Who's Who" of the SiC community, strongly benefiting from collaborations between research institutions and enterprises active in SiC crystal growth and device development.
