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Terrestrial Neutron-induced Soft Errors in Advanced Memory Devices
Terrestrial neutron-induced soft errors in semiconductor memory devices are currently a major concern in reliability issues. Understanding the mechanism and quantifying soft-error rates are primarily crucial for the design and quality assurance of semiconductor memory devices.This book covers the relevant up-to-date topics in terrestrial neutron-induced soft errors, and aims to provide succinct knowledge on neutron-induced soft errors to the readers by presenting several valuable and unique features.
CERN Courier
This journal is devoted to the latest research on physics, publishing articles on everything from elementary particle behavior to black holes and the history of the universe.
JJAP
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