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Analysis and Design of MOSFETs
  • Language: en
  • Pages: 356

Analysis and Design of MOSFETs

Analysis and Design of MOSFETs: Modeling, Simulation, and Parameter Extraction is the first book devoted entirely to a broad spectrum of analysis and design issues related to the semiconductor device called metal-oxide semiconductor field-effect transistor (MOSFET). These issues include MOSFET device physics, modeling, numerical simulation, and parameter extraction. The discussion of the application of device simulation to the extraction of MOSFET parameters, such as the threshold voltage, effective channel lengths, and series resistances, is of particular interest to all readers and provides a valuable learning and reference tool for students, researchers and engineers. Analysis and Design of MOSFETs: Modeling, Simulation, and Parameter Extraction, extensively referenced, and containing more than 180 illustrations, is an innovative and integral new book on MOSFETs design technology.

ESD Design and Analysis Handbook
  • Language: en
  • Pages: 214

ESD Design and Analysis Handbook

Electrostatic Discharge is a pervasive issue in the semiconductor industry affecting both manufacturers and users of semiconductors. This easy-to-read, practical handbook presents an overview of ESD as it effects electronic circuits and provides a concise introduction for students, engineers, circuit designers and failure analysts.

Semiconductor Device Physics and Simulation
  • Language: en
  • Pages: 341

Semiconductor Device Physics and Simulation

The advent of the microelectronics technology has made ever-increasing numbers of small devices on a same chip. The rapid emergence of ultra-large-scaled-integrated (ULSI) technology has moved device dimension into the sub-quarter-micron regime and put more than 10 million transistors on a single chip. While traditional closed-form analytical models furnish useful intuition into how semiconductor devices behave, they no longer provide consistently accurate results for all modes of operation of these very small devices. The reason is that, in such devices, various physical mechanisms affect the device performance in a complex manner, and the conventional assumptions (i. e. , one-dimensional t...

Analysis and Design of MOSFETs
  • Language: en
  • Pages: 372

Analysis and Design of MOSFETs

Analysis and Design of MOSFETs: Modeling, Simulation, and Parameter Extraction is the first book devoted entirely to a broad spectrum of analysis and design issues related to the semiconductor device called metal-oxide semiconductor field-effect transistor (MOSFET). These issues include MOSFET device physics, modeling, numerical simulation, and parameter extraction. The discussion of the application of device simulation to the extraction of MOSFET parameters, such as the threshold voltage, effective channel lengths, and series resistances, is of particular interest to all readers and provides a valuable learning and reference tool for students, researchers and engineers. Analysis and Design of MOSFETs: Modeling, Simulation, and Parameter Extraction, extensively referenced, and containing more than 180 illustrations, is an innovative and integral new book on MOSFETs design technology.

American Doctoral Dissertations
  • Language: en
  • Pages: 532

American Doctoral Dissertations

  • Type: Book
  • -
  • Published: 1987
  • -
  • Publisher: Unknown

None

Index to American Doctoral Dissertations
  • Language: en
  • Pages: 1252

Index to American Doctoral Dissertations

  • Type: Book
  • -
  • Published: 1989
  • -
  • Publisher: Unknown

None

Index of Patents Issued from the United States Patent and Trademark Office
  • Language: en
  • Pages: 4160

Index of Patents Issued from the United States Patent and Trademark Office

  • Type: Book
  • -
  • Published: Unknown
  • -
  • Publisher: Unknown

None

ESD Design and Analysis Handbook
  • Language: en
  • Pages: 224

ESD Design and Analysis Handbook

Electrostatic Discharge is a pervasive issue in the semiconductor industry affecting both manufacturers and users of semiconductors. This easy-to-read, practical handbook presents an overview of ESD as it effects electronic circuits and provides a concise introduction for students, engineers, circuit designers and failure analysts.

Semiconductor Device Physics and Simulation
  • Language: en
  • Pages: 352

Semiconductor Device Physics and Simulation

The advent of the microelectronics technology has made ever-increasing numbers of small devices on a same chip. The rapid emergence of ultra-large-scaled-integrated (ULSI) technology has moved device dimension into the sub-quarter-micron regime and put more than 10 million transistors on a single chip. While traditional closed-form analytical models furnish useful intuition into how semiconductor devices behave, they no longer provide consistently accurate results for all modes of operation of these very small devices. The reason is that, in such devices, various physical mechanisms affect the device performance in a complex manner, and the conventional assumptions (i. e. , one-dimensional t...

ASCE Combined Index
  • Language: en
  • Pages: 1054

ASCE Combined Index

  • Type: Book
  • -
  • Published: 1991
  • -
  • Publisher: Unknown

Indexes materials appearing in the Society's Journals, Transactions, Manuals and reports, Special publications, and Civil engineering.