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GaN-based Materials and Devices
The unique materials properties of GaN-based semiconductors have stimulated a great deal of interest in research and development regarding nitride materials growth and optoelectronic and nitride-based electronic devices. High electron mobility and saturation velocity, high sheet carrier concentration at heterojunction interfaces, high breakdown field, and low thermal impedance of GaN-based films grown over SiC or bulk AlN substrates make nitride-based electronic devices very promising. The chemical inertness of nitrides is another key property.This volume, written by experts on different aspects of nitride technology, addresses the entire spectrum of issues related to nitride materials and devices, and it will be useful for technologists, scientists, engineers, and graduate students who are working on wide bandgap materials and devices. The book can also be used as a supplementary text for graduate courses on wide bandgap semiconductor technology.
Nanoelectronic Materials, Devices and Modeling
As CMOS scaling is approaching the fundamental physical limits, a wide range of new nanoelectronic materials and devices have been proposed and explored to extend and/or replace the current electronic devices and circuits so as to maintain progress with respect to speed and integration density. The major limitations, including low carrier mobility, degraded subthreshold slope, and heat dissipation, have become more challenging to address as the size of silicon-based metal oxide semiconductor field effect transistors (MOSFETs) has decreased to nanometers, while device integration density has increased. This book aims to present technical approaches that address the need for new nanoelectronic materials and devices. The focus is on new concepts and knowledge in nanoscience and nanotechnology for applications in logic, memory, sensors, photonics, and renewable energy. This research on nanoelectronic materials and devices will be instructive in finding solutions to address the challenges of current electronics in switching speed, power consumption, and heat dissipation and will be of great interest to academic society and the industry.
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Control Components Using Si, GaAs, and GaN Technologies
Control circuits are important parts of RF and microwave systems. Their compact size, high performance, and low cost have played a vital role in the development of cost effective solutions and new applications during the past quarter century. This book provides a comprehensive treatment of such circuits, including device operation and their models, basic circuit theory and designs, and applications. The unique features of this book include in-depth and comprehensive study of control circuits, extensive design equations and figures, treatment of practical aspect of circuits and description of fabrication technologies. It provides you with a broad view of solid state control circuits including various technologies and their comparison and up to date information.
Power GaN Devices
This book presents the first comprehensive overview of the properties and fabrication methods of GaN-based power transistors, with contributions from the most active research groups in the field. It describes how gallium nitride has emerged as an excellent material for the fabrication of power transistors; thanks to the high energy gap, high breakdown field, and saturation velocity of GaN, these devices can reach breakdown voltages beyond the kV range, and very high switching frequencies, thus being suitable for application in power conversion systems. Based on GaN, switching-mode power converters with efficiency in excess of 99 % have been already demonstrated, thus clearing the way for mas...
GaN Technology
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Machine Learning and Knowledge Discovery in Databases. Research Track
The multi-volume set LNAI 12975 until 12979 constitutes the refereed proceedings of the European Conference on Machine Learning and Knowledge Discovery in Databases, ECML PKDD 2021, which was held during September 13-17, 2021. The conference was originally planned to take place in Bilbao, Spain, but changed to an online event due to the COVID-19 pandemic. The 210 full papers presented in these proceedings were carefully reviewed and selected from a total of 869 submissions. The volumes are organized in topical sections as follows: Research Track: Part I: Online learning; reinforcement learning; time series, streams, and sequence models; transfer and multi-task learning; semi-supervised and f...
As Long as Space Endures
The Kalacakra Tantra (Kalacakra means "wheel of time") is a tradition of Buddhist theory and practice whose root text treats a fantastic expanse of knowledge ranging from observations of the cosmos to investigations of meditative states and vital bodily energies. In the Tibetan-speaking world, a public Kalacakra initiation remains the most sought-after event in the life of a devout Buddhist. The Fourteenth Dalai Lama has long had a strong connection with the Kalacakra Tantra; he brought the initiation to the West in 1981, performing it in the United States, Switzerland, Spain, and Australia. This volume has been created to celebrate his long involvement with the Kalacakra teachings. The twenty-five contributors, scholars who have made tantric studies their specialty, have contributed translations of works by great Indian and Tibetan Kalacakra masters, analyses of historical figures, methods of practice, essays on medicine ritual expertise, and ethical discipline. The collection also includes practical advice for Western students and practitioners from contemporary Tibetan Kalacakra masters.
The Chinese Classics
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The Chinese Classics
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