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Multigroup Equations for the Description of the Particle Transport in Semiconductors
Deterministic simulation of the particle transport in semiconductor devices is an interesting alternative to the common Monte Carlo approach. In this book, a state-of-the-art technique called the multigroup approach is presented and applied to a variety of transport problems in bulk semiconductors and semiconductor devices. High-field effects as well as hot-phonon phenomena in polar semiconductors are studied in detail. The mathematical properties of the presented numerical method are studied, and the method is applied to simulating the transport of a two-dimensional electron gas formed at a semiconductor heterostructure. Concerning semiconductor device simulation, several diodes and transistors fabricated of silicon and gallium arsenide are investigated. For all of these simulations, the numerical techniques employed are discussed in detail. This unique study of the application of direct methods for semiconductor device simulation provides the interested reader with an indispensable reference on this growing research area.
time admin
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Proceedings
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1738-1755
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A Victorian Sailor's Grave in the Seto Inland Sea
In 1868, Frank Toovey Lake, a young British Midshipman, died while serving with the Royal Navy and was interred on the island of Hiroshima in the Seto Inland Sea of Japan. Up until recently Lake’s grave on Hiroshima had been identified only by his family name ‘Lake,’ and he was described as an English officer who died while serving on the Royal Navy survey ship, HMS Sylvia. However no further information on Lake could be found until new research showed that in one important detail these facts were wrong: namely that the ship had been incorrectly identified as HMS Sylvia when in fact he died on HMS Manilla. From knowing this, it has now been possible to give the young officer his full n...
Multigroup Equations for the Description of the Particle Transport in Semiconductors
Deterministic simulation of the particle transport in semiconductor devices is an interesting alternative to the common Monte Carlo approach. In this book, a state-of-the-art technique called the multigroup approach is presented and applied to a variety of transport problems in bulk semiconductors and semiconductor devices. High-field effects as well as hot-phonon phenomena in polar semiconductors are studied in detail. The mathematical properties of the presented numerical method are studied, and the method is applied to simulating the transport of a two-dimensional electron gas formed at a semiconductor heterostructure. Concerning semiconductor device simulation, several diodes and transistors fabricated of silicon and gallium arsenide are investigated. For all of these simulations, the numerical techniques employed are discussed in detail.This unique study of the application of direct methods for semiconductor device simulation provides the interested reader with an indispensable reference on this growing research area.
