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Towards the First Silicon Laser
Silicon, the leading material in microelectronics during the last four decades, also promises to be the key material in the future. Despite many claims that silicon technology has reached fundamental limits, the performance of silicon microelectronics continues to improve steadily. The same holds for almost all the applications for which Si was considered to be unsuitable. The main exception to this positive trend is the silicon laser, which has not been demonstrated to date. The main reason for this comes from a fundamental limitation related to the indirect nature of the Si band-gap. In the recent past, many different approaches have been taken to achieve this goal: dislocated silicon, extremely pure silicon, silicon nanocrystals, porous silicon, Er doped Si-Ge, SiGe alloys and multiquantum wells, SiGe quantum dots, SiGe quantum cascade structures, shallow impurity centers in silicon and Er doped silicon. All of these are abundantly illustrated in the present book.
Laser Physics at the Limits
Published on the occasion of Theodor Hänsch's 60th Birthday emphasis is placed on precision related to results in a variety of fields, such as atomic clocks, frequency standards, and the measurement of physical constants in atomic physics. Furthermore, illustrations and engineering applications of the fundamentals of quantum mechanics are widely covered. It has contributions by Nobel prize winners Norman F. Ramsey, Steven Chu, and Carl E. Wieman.
Atoms in Strong Fields
This book collects the lectures given at the NATO Advanced Study Institute on "Atoms in Strong Fields", which took place on the island of Kos, Greece, during the two weeks of October 9-21,1988. The designation "strong field" applies here to an external electromagnetic field that is sufficiently strong to cause highly nonlinear alterations in atomic or molecular struc ture and dynamics. The specific topics treated in this volume fall into two general cater gories, which are those for which strong field effects can be studied in detail in terrestrial laboratories: the dynamics of excited states in static or quasi-static electric and magnetic fields; and the interaction of atoms and molecules w...
Integrated Silicon-Metal Systems at the Nanoscale
Integrated Silicon-Metal Systems at the Nanoscale: Applications in Photonics, Quantum Computing, Networking, and Internet is a comprehensive guide to the interaction, materials and functional integration at the nanoscale of the silicon-metal binary system and a variety of emerging and next-generation advanced device applications, from energy and electronics, to sensing, quantum computing and quantum internet networks. The book guides the readers through advanced techniques and etching processes, combining underlying principles, materials science, design, and operation of metal-Si nanodevices. Each chapter focuses on a specific use of integrated metal-silicon nanostructures, including storage...
Electricity and Magnetism
Outstanding undergraduate text features self-contained chapter on vector algebra and a chapter devoted to radiation that illustrates many analysis methods. Includes 300 detailed examples, exercises at each chapter's end, and answers to odd-numbered problems.
Fundamentals and Applications of Nano Silicon in Plasmonics and Fullerines
Fundamentals and Applications of Nano Silicon in Plasmonics and Fullerines: Current and Future Trends addresses current and future trends in the application and commercialization of nanosilicon. The book presents current, innovative and prospective applications and products based on nanosilicon and their binary system in the fields of energy harvesting and storage, lighting (solar cells and nano-capacitor and fuel cell devices and nanoLEDs), electronics (nanotransistors and nanomemory, quantum computing, photodetectors for space applications; biomedicine (substance detection, plasmonic treatment of disease, skin and hair care, implantable glucose sensor, capsules for drug delivery and underg...
Nanosilicon
Properties of nanosilicon in the form of nanoparticles, nanowires, nanotubes, and as porous material are of great interest. They can be used in finding suitable components for future miniature devices, and for the more exciting possibilities of novel optoelectronic applications due to bright luminescence from porous silicon, nanoparticles and nanowires. New findings from research into metal encapsulated clusters, silicon fullerenes and nanotubes have opened up a new paradigm in nanosilicon research and this could lead to large scale production of nanoparticles with control on size and shape as well as novel quasi one-dimensional structures. There are possibilities of using silicon as an opti...
Colliding Plane Waves in General Relativity
This monograph surveys recent research on the collision and interaction of gravitational and electromagnetic waves. "This is a particularly important topic in general relativity," the author notes, "since the theory predicts that there will be a nonlinear interaction between such waves." Geared toward graduate students and researchers in general relativity, the text offers a comprehensive and unified review of the vast literature on the subject. The first eight chapters offer background, presenting the field equations and discussing some qualitative aspects of their solution. Subsequent chapters explore further exact solutions for colliding plane gravitational waves and the collision and interaction of electromagnetic waves. The final chapters summarize all related results for the collision of plane waves of different types and in non-flat backgrounds. A new postscript updates developments since the book's initial 1991 publication.
Science and Engineering of One- and Zero-Dimensional Semiconductors
This volume comprises the proceedings of the NATO Advanced Research Workshop on the Science and Engineering of 1- and O-dimensional semiconductors held at the University of Cadiz from 29th March to 1st April 1989, under the auspices of the NATO International Scientific Exchange Program. There is a wealth of scientific activity on the properties of two-dimensional semiconductors arising largely from the ease with which such structures can now be grown by precision epitaxy techniques or created by inversion at the silicon-silicon dioxide interface. Only recently, however, has there burgeoned an interest in the properties of structures in which carriers are further confined with only one or, in...
