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Vols. for 1963- include as pt. 2 of the Jan. issue: Medical subject headings.
stacked QD structure and is useful for examining the possibility of all optical measurement of stacked QD layers. Optical absorption spectra of self-assembled QDs has been little reported, and further investigation in necessary to study hole-burning memory. 2.5 Summary This chapter describes recent advances in quantum dot fabrication tech nologies, focusing on our self-formed quantum dot technologies including TSR quantum dots and SK-mode self-assembled quantum dots. As is described in this chapter, there are many possible device applications such as quantum dot tunneling memory devices, quantum dot fioating-dot gate FETs, quantum dot lasers, and quantum dot hole-burning memory devices. The ...
The future focus of nanotechnology will be on realizing new functions over greater scales. This book describes the creation of nano- and microscale structures and functions by controlling temperature, light, pressure, or carrier injections. It includes novel nano-integration technologies such as self-organization of surface nanostructures, quantum well structures, microlithography and micromachines, as well as new techniques of laser spectroscopy and new computational methods.
This book reports on origin and history of polycondensation chemistry beginning in the first half of the 19th century. Furthermore, history and inventors of the most important polycondensates, such as Nylons, PET or polycarbonates, are described. The classical theory of step-growth polymerizations is discussed in the light of the latest experimental and theoretical results. Particular emphasis is laid on the role of cyclization reactions. Special categories of polycondensation processes are discussed in more detail: syntheses of hyperbranched and multicyclic polymers, non-stoichiometric polycondensations, interfacial polycondensations, solid state polycondensations, condensative chain polymerizations etc.
In recent years, III-V devices, integrated circuits, and superconducting integrated circuits have emerged as leading contenders for high-frequency and ultrahigh speed applications. GaAs MESFETs have been applied in microwave systems as low-noise and high-power amplifiers since the early 1970s, replacing silicon devices. The heterojunction high-electron-mobility transistor (HEMT), invented in 1980, has become a key component for satellite broadcasting receiver systems, serving as the ultra-low-noise device at 12 GHz. Furthermore, the heterojunction bipolar transistor (HBT) has been considered as having the highest switching speed and cutoff frequency in the semiconductor device field. Initial...
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In its original form, this widely acclaimed primer on the fundamentals of quantized semiconductor structures was published as an introductory chapter in Raymond Dingle's edited volume (24) of Semiconductors and Semimetals. Having already been praised by reviewers for its excellent coverage, this material is now available in an updated and expanded "student edition." This work promises to become a standard reference in the field. It covers the basics of electronic states as well as the fundamentals of optical interactions and quantum transport in two-dimensional quantized systems. This revised student edition also includes entirely new sections discussing applications and one-dimensional and zero-dimensional systems. - Available for the first time in a new, expanded version - Provides a concise introduction to the fundamentals and fascinating applications of quantized semiconductor structures