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Crystal Growth of Silicon for Solar Cells
This book, a continuation of the series “Advances in Materials Research,” is intended to provide the general basis of the science and technology of crystal growth of silicon for solar cells. In the face of the destruction of the global environment,the degradationofworld-widenaturalresourcesandtheexha- tion of energy sources in the twenty-?rst century, we all have a sincere desire for a better/safer world in the future. In these days, we strongly believe that it is important for us to rapidly developanewenvironment-friendlycleanenergyconversionsystemusingsolar energyastheultimatenaturalenergysource. Forinstance,mostofournatural resources and energy sources will be exhausted within the nex...
Crystal Growth of Silicon for Solar Cells
This book, a continuation of the series “Advances in Materials Research,” is intended to provide the general basis of the science and technology of crystal growth of silicon for solar cells. In the face of the destruction of the global environment,the degradationofworld-widenaturalresourcesandtheexha- tion of energy sources in the twenty-?rst century, we all have a sincere desire for a better/safer world in the future. In these days, we strongly believe that it is important for us to rapidly developanewenvironment-friendlycleanenergyconversionsystemusingsolar energyastheultimatenaturalenergysource. Forinstance,mostofournatural resources and energy sources will be exhausted within the nex...
Silicon-Germanium (SiGe) Nanostructures
Nanostructured silicon-germanium (SiGe) opens up the prospects of novel and enhanced electronic device performance, especially for semiconductor devices. Silicon-germanium (SiGe) nanostructures reviews the materials science of nanostructures and their properties and applications in different electronic devices. The introductory part one covers the structural properties of SiGe nanostructures, with a further chapter discussing electronic band structures of SiGe alloys. Part two concentrates on the formation of SiGe nanostructures, with chapters on different methods of crystal growth such as molecular beam epitaxy and chemical vapour deposition. This part also includes chapters covering strain...
Compound Semiconductors 1998
Compound Semiconductors 1998 explores research and development in key semiconductor materials and III-V compounds such as gallium arsenide, indium phosphide, gallium nitride, silicon germanium, and silicon carbide. It critically assesses progress in key technologies such as reliability assessment and reports on advances in the use of semiconductors in modern electronic and optoelectronic devices. Coverage in this volume reflects the increased interest and research funding in nitride-based materials; wide band-gap devices; mobile communications, including III-V-based transistors and photonic devices; crystal growth and characterization; and nanoscale phenomena, such as quantum wires, dots, and other low dimensional structures.
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Mesoscopic Physics and Electronics
Semiconductor technology has developed considerably during the past several decades. The exponential growth in microelectronic processing power has been achieved by a constant scaling down of integrated cir,cuits. Smaller fea ture sizes result in increased functional density, faster speed, and lower costs. One key ingredient of the LSI technology is the development of the lithog raphy and microfabrication. The current minimum feature size is already as small as 0.2 /tm, beyond the limit imposed by the wavelength of visible light and rapidly approaching fundamental limits. The next generation of devices is highly likely to show unexpected properties due to quantum effects and fluctuations. Th...
Frontiers in Materials Research
New advanced materials are being rapidly developed, thanks to the progress of science. These are making our daily life more convenient. The Institute for Materials Research (IMR) at Tohoku University has greatly contributed for to the creation and development of various advanced materials and the progress in the ?eld of material science for almost a century. For example, our early research achievements on the physical metallurgy of iron carbon alloys led to the innovation of technology for making high-quality steels, which has greatly contributed to the advancement of the steel and related industry in Japan and rest of the world. IMR has focused on basic research that can be translated into ...
SiGe and Ge
The second International SiGe & Ge: Materials, Processing, and Devices Symposium was part of the 2006 ECS conference held in Cancun, Mexico from October 29-Nov 3, 2006. This meeting provided a forum for reviewing and discussing all materials and device related aspects of SiGe & Ge. The hardcover edition includes a bonus CD-ROM containing the PDF of the entire issue.
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