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"This Proceedings Volume includes papers that were presented at the Eighth Symposium on High Purity Silicon held in Honolulu, Hawaii at the 206th Meeting of the Electrochemical Society, October 3-8, 2004"--Pref.
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Lecturers and researchers in the areas of industrial engineering, quality management and business development, and middle and higher management in business or technology- oriented positions, will find this book invaluable.
This was the tenth symposium of the International Symposium on Silcon Material Science and Technology, going back to 1969. This issue provides a unique historical record of the program and will aid in the understanding of silicon materials over the last 35 years.
Memory Mass Storage describes the fundamental storage technologies, like Semiconductor, Magnetic, Optical and Uncommon, detailing the main technical characteristics of the storage devices. It deals not only with semiconductor and hard disk memory, but also with different ways to manufacture and assembly them, and with their application to meet market requirements. It also provides an introduction to the epistemological issues arising in defining the process of remembering, as well as an overview on human memory, and an interesting excursus about biological memories and their organization, to better understand how the best memory we have, our brain, is able to imagine and design memory.
The issue of the 10th High Purity Silicon symposium provides an overview of the latest developments in the growth, characterization, devices processing, and application of high purity silicon in either bulk or epitaxial form. The emphasis is on the control and prevention of impurity incorporation, characterization and detection of defects and impurity states in high purity and high resistivity silicon for superior device performances. Device and circuit aspects related to the application of devices fabricated on high resistivity silicon wafers will also be addressed. Special attention will be given to alternative and high-mobility substrates and their material and device aspects.