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The Quantum Hall Effects
The experimental discovery of the fractional quantum Hall effect (FQHE) at the end of 1981 by Tsui, Stormer and Gossard was absolutely unexpected since, at this time, no theoretical work existed that could predict new struc tures in the magnetotransport coefficients under conditions representing the extreme quantum limit. It is more than thirty years since investigations of bulk semiconductors in very strong magnetic fields were begun. Under these conditions, only the lowest Landau level is occupied and the theory predicted a monotonic variation of the resistivity with increasing magnetic field, depending sensitively on the scattering mechanism. However, the ex perimental data could not be a...
Advances in Solid State Physics
Volume 43 of Advances in Solid State Physics contains the written versions of most of the plenary and invited lectures of the Spring Meeting of the Condensed Matter Physics section of the Deutsche Physikalische Gesellschaft held from March 24 to 28, 2003 in Dresden, Germany. Many of the topical talks given at the numerous and very lively symposia are also included. They covered an extremely interesting selection of timely subjects. Thus the book truly reflects the status of the field of solid state physics in 2003, and explains its attractiveness, not only in Germany but also internationally.
Computer-Supported Cooperative Work
A detailed introduction to interdisciplinary application area of distributed systems, namely the computer support of individuals trying to solve a problem in cooperation with each other but not necessarily having identical work places or working times. The book is addressed to students of distributed systems, communications, information science and socio-organizational theory, as well as to users and developers of systems with group communication and cooperation as top priorities.
Photovoltaics for the 21st Century 6
The papers included in this issue of ECS Transactions were originally presented in the symposium ¿Photovoltaics for the 21st Century 6 ¿, held during the 218th meeting of The Electrochemical Society, in Las Vegas, Nevada from October 10 to 15, 2010.
Semiconductor Wafer Bonding 10: Science, Technology, and Applications
This issue of ECS Transactions on Semiconductor Wafer Bonding will cover the state-of-the-art R&D results of the last 2 years in the field of semiconductor wafer bonding technology. Wafer Bonding is an Enabling Technology that can be used to create novel composite materials systems and devices that would otherwise be unattainable. Wafer Bonding today is rapidly expanding into new applications in such diverse fields as photonics, sensors, MEMS. X-ray optics, non-electronic microstructures, high performance CMOS platforms for high end servers, Si-Ge, strained SOI, Germanium-on-Insulator (GeOI) and Nanotechnologies.
The Bahá'í World
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