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Introduction to Nitride Semiconductor Blue Lasers and Light Emitting Diodes
The "blue laser" is an exciting new device used in physics. The potential is now being recognized for its development into a commercial lighting system using about a tenth of the power and with a thousand times the operating lifetime of a comparable conventional system. This comprehensive work introduces the subject at a level suitable for graduate students. It covers the basics physics of light emitting diodes (LEDs) and laser diodes (LDs) based on gallium nitride and related nitride semiconductors, and gives an outline of their structural, transport and optical properties, and the relevant device physics. It begins with the fundamentals, and covers both theory and experiment, as well as an examination of actual and potential device applications. Shuji Nakamura and Nichia Chemicals Industries made the initial breakthroughs in the field, and these have revealed that LEDs and LDs are a sophisticated physical phenomenon and a commercial reality.
III-Nitride Ultraviolet Emitters
This book provides a comprehensive overview of the state-of-the-art in group III-nitride based ultraviolet LED and laser technologies, covering different substrate approaches, a review of optical, electronic and structural properties of InAlGaN materials as well as various optoelectronic components. In addition, the book gives an overview of a number of key application areas for UV emitters and detectors, including water purification, phototherapy, sensing, and UV curing. The book is written for researchers and graduate level students in the area of semiconductor materials, optoelectronics and devices as well as developers and engineers in the various application fields of UV emitters and detectors.
Lasers
Developments in lasers continue to enable progress in many areas such as eye surgery, the recording industry and dozens of others. This book presents citations from the book literature for the last 25 years and groups them for ease of access which is also provided by subject, author and titles indexes.
Ammonothermal Synthesis and Crystal Growth of Nitrides
This book provides a collection of contributed chapters, delivering a comprehensive overview of topics related to the synthesis and crystal growth of nitride compounds under supercritical ammonia conditions. Focusing on key chemical and technological aspects of ammonothermal synthesis and growth of functional nitride compounds, the book also describes many innovative techniques for in-situ observation and presents new data fundamental for materials synthesis under ammonothermal conditions. With its detailed coverage of many thermodynamic and kinetics aspects, which are necessary for understanding and controlling crystal growth, this contributed volume is the ideal companion to materials chemists and engineers at any point in their journey in this rich and exciting field.
Technology of Gallium Nitride Crystal Growth
This book discusses the important technological aspects of the growth of GaN single crystals by HVPE, MOCVD, ammonothermal and flux methods for the purpose of free-standing GaN wafer production.
LED Packaging for Lighting Applications
Since the first light-emitting diode (LED) was invented by Holonyak and Bevacqua in 1962, LEDs have made remarkable progress in the past few decades with the rapid development of epitaxy growth, chip design and manufacture, packaging structure, processes, and packaging materials. LEDs have superior characteristics such as high efficiency, small size, long life, low power consumption, and high reliability. The market for white LED is growing rapidly in various applications. It has been widely accepted that white LEDs will be the fourth illumination source to substitute the incandescent, fluorescent, and high-pressure sodium lamps. With the development of LED chip and packaging technologies, t...
GaN and Related Alloys - 2001:
This book focuses on three main themes. Theme one - advances in basic science. Point defects, dislocations, doping, the properties of nitride alloys with a special emphasis on localization phenomena and GaAsN alloys (which are very promising for long-wavelength emitters), transport and optical properties are also featured. Theme two - growth and growth-related issues. Significant advances have been made in understanding/improving all major nitride growth techniques (MBE, MOCVD, HVPE). Techniques such as ELOG and the development of bulk-like substrates are receiving attention as methods to reduce the number of dislocations. Theme three - devices. Tremendous progress has been reported in device design and optimization, and also in understanding device processing issues such as p-contacts, laser lift-off, and etching. Overall, the book offers a broad exchange of scientific knowledge and technical expertise. Topics include: molecular beam epitaxy and growth kinetics; point defects and doping; light emitters; nitride alloys and lateral epitaxy; quantum wells; transport and optical properties; vapor phase epitaxy; extended defects; electronic devices and processing.
GaN and Related Alloys - 2001: Volume 693
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
