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Semiconductors Probed by Ultrafast Laser Spectroscopy, Volume II discusses the use of ultrafast laser spectroscopy in studying fast physics in semiconductors. It reviews progress on the experimental and theoretical understanding of ultrafast events that occur on a picosecond and nanosecond time scale. This volume discusses electronic relaxation in amorphous semiconductors and the physical mechanisms during and after the interaction of an intense laser pulse with a semiconductor. It also covers the relaxation of carriers in semiconductors; transient optical pulse propagation; and methods of time-resolved spectroscopy. Scientists, engineers, and graduate students will find this book invaluable.
Gathering top experts in the field, the 20th ICPS proceedings reviews the progress in all aspects of semiconductor physics. The proceedings will include state-of-the-art lectures with special emphasis on exciting new developments. It should serve as excellent material for researchers in this and related fields.
Semiconductors Probed by Ultrafast Laser Spectroscopy, Volume 1 discusses the use of ultrafast laser spectroscopy in studying fast physics in semiconductors. It reviews progress on the experimental and theoretical understanding of ultrafast events that occur on a picosecond and nanosecond time scale. This volume first explores the relaxation of energy and the momentum of hot carriers and then turns to relaxation of plasmas and phonons. It also discusses the dynamics of excitons, polaritons, and excitonic molecules and reviews transient transport and diffusion of carriers. Scientists, engineers, and graduate students will find this book invaluable.
Advances in Electronics and Electron Physics
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Great progress has been made in the field of ordinary semiconductor physics and associated technologies. For the time being, if we could use new materials such as organic semiconductors progress in electronics could be accelerated. Characteristics of organic semiconductors that are superior to others are: i) high photo-conductivity under irradiation along with low leakage current in the dark, ii) high sensitivity of the conductivity to various gases and to pressure. iii) possibility of using them in the amorphous state, iv) possibility of making devices of extremely small size, v) large variety of the materials, which makes suitable choice of material component easy. A possible future develo...
The Proceedings of the 17th International Conference on the Physics of Semiconductors are contained in this volume. A record 1050 scientists from 40 countries participated in the Conference which was held in San Francisco August 6ยท1 0, 1984. The Conference was organized by the ICPS Committee and sponsored by the International Union of Pure and Applied Physics and other professional, government, and industrial organizations listed on the following pages. Papers representing progress in all aspects of semiconductor physics were presented. Far more abstracts (765) than could be presented in a five-day meeting were considered by the International Program Committee. A total of 350 papers, consis...