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Transistor Level Modeling for Analog/RF IC Design
The editors and authors present a wealth of knowledge regarding the most relevant aspects in the field of MOS transistor modeling. The variety of subjects and the high quality of content of this volume make it a reference document for researchers and users of MOSFET devices and models. The book can be recommended to everyone who is involved in compact model developments, numerical TCAD modeling, parameter extraction, space-level simulation or model standardization. The book will appeal equally to PhD students who want to understand the ins and outs of MOSFETs as well as to modeling designers working in the analog and high-frequency areas.
POWER/HVMOS Devices Compact Modeling
Semiconductor power electronics plays a dominant role due its increased efficiency and high reliability in various domains including the medium and high electrical drives, automotive and aircraft applications, electrical power conversion, etc. Power/HVMOS Devices Compact Modeling will cover very extensive range of topics related to the development and characterization power/high voltage (HV) semiconductor technologies as well as modeling and simulations of the power/HV devices and smart power integrated circuits (ICs). Emphasis is placed on the practical applications of the advanced semiconductor technologies and the device level compact/spice modeling. This book is intended to provide reference information by selected, leading authorities in their domain of expertise. They are representing both academia and industry. All of them have been chosen because of their intimate knowledge of their subjects as well as their ability to present them in an easily understandable manner.
Organic and Inorganic Light Emitting Diodes
This book covers a comprehensive range of topics on the physical mechanisms of LEDs (light emitting diodes), scattering effects, challenges in fabrication and efficient enhancement techniques in organic and inorganic LEDs. It deals with various reliability issues in organic/inorganic LEDs like trapping and scattering effects, packaging failures, efficiency droops, irradiation effects, thermal degradation mechanisms, and thermal degradation processes. Features: Provides insights into the improvement of performance and reliability of LEDs Highlights the optical power improvement mechanisms in LEDs Covers the challenges in fabrication and packaging of LEDs Discusses pertinent failures and degradation mechanisms Includes droop minimization techniques This book is aimed at researchers and graduate students in LEDs, illumination engineering, optoelectronics, and polymer/organic materials.
Springer Handbook of Semiconductor Devices
This Springer Handbook comprehensively covers the topic of semiconductor devices, embracing all aspects from theoretical background to fabrication, modeling, and applications. Nearly 100 leading scientists from industry and academia were selected to write the handbook's chapters, which were conceived for professionals and practitioners, material scientists, physicists and electrical engineers working at universities, industrial R&D, and manufacturers. Starting from the description of the relevant technological aspects and fabrication steps, the handbook proceeds with a section fully devoted to the main conventional semiconductor devices like, e.g., bipolar transistors and MOS capacitors and ...
Charge-Based MOS Transistor Modeling
Modern, large-scale analog integrated circuits (ICs) are essentially composed of metal-oxide semiconductor (MOS) transistors and their interconnections. As technology scales down to deep sub-micron dimensions and supply voltage decreases to reduce power consumption, these complex analog circuits are even more dependent on the exact behavior of each transistor. High-performance analog circuit design requires a very detailed model of the transistor, describing accurately its static and dynamic behaviors, its noise and matching limitations and its temperature variations. The charge-based EKV (Enz-Krummenacher-Vittoz) MOS transistor model for IC design has been developed to provide a clear under...
A Short History of Circuits and Systems
After an overview of major scientific discoveries of the 18th and 19th centuries, which created electrical science as we know and understand it and led to its useful applications in energy conversion, transmission, manufacturing industry and communications, this Circuits and Systems History book fills a gap in published literature by providing a record of the many outstanding scientists, mathematicians and engineers who laid the foundations of Circuit Theory and Filter Design from the mid-20th Century. Additionally, the book records the history of the IEEE Circuits and Systems Society from its origins as the small Circuit Theory Group of the Institute of Radio Engineers (IRE), which merged w...
Tradeoffs and Optimization in Analog CMOS Design
Analog CMOS integrated circuits are in widespread use for communications, entertainment, multimedia, biomedical, and many other applications that interface with the physical world. Although analog CMOS design is greatly complicated by the design choices of drain current, channel width, and channel length present for every MOS device in a circuit, these design choices afford significant opportunities for optimizing circuit performance. This book addresses tradeoffs and optimization of device and circuit performance for selections of the drain current, inversion coefficient, and channel length, where channel width is implicitly considered. The inversion coefficient is used as a technology inde...
Design of System on a Chip
Design of System on a Chip is the first of two volumes addressing the design challenges associated with new generations of the semiconductor technology. The various chapters are the compilations of tutorials presented at workshops in Brazil in the recent years by prominent authors from all over the world. In particular the first book deals with components and circuits. Device models have to satisfy the conditions to be computationally economical in addition to be accurate and to scale over various generations of technology. In addition the book addresses issues of the parasitic behavior of deep sub-micron components, such as parameter variations and sub-threshold effects. Furthermore various authors deal with items like mixed signal components and memories. We wind up with an exposition of the technology problems to be solved if our community wants to maintain the pace of the "International Technology Roadmap for Semiconductors" (ITRS).
Modeling Nanowire and Double-Gate Junctionless Field-Effect Transistors
A detailed introduction to the design, modeling, and operation of junctionless field effect transistors (FETs), including advantages and limitations.
