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Atomic Layer Deposition Applications 4
The continuously expanding realm of Atomic Layer Deposition (ALD) Applications is the symposium focus. ALD can enable the precise deposition of ultra-thin, highly conformal coatings over complex 3D topography, with controlled composition and properties. This issue of the ECS Transactions contains peer reviewed papers presented at the symposium. Breadths of ALD Applications are featured: novel nano-composites and nanostructures, dielectrics for state-of-the-art transistors and capacitors, optoelectronics and a variety of other emerging applications.
Kartography
Crib mates, raised together from birth, narrator Raheen and her best friend Karim dream each other's dreams, finish each other's sentences, speak in a language of anagrams. They share an idyllic childhood in upper-class Karachi with parents who are also best friends, even once engaged to the other until they rematched in what they jokingly call the fiancee swap. The night Karim's family migrates from Karachi to London, Raheen knows that some of my tears were his tears and some of his tears were mine. But as distance and adolescence split them apart, Karim takes refuge in the rationality of maps while Raheen searches for the secret behind her parents' exchange. What she uncovers takes us back two decades to reveal a story not just of a family's turbulent history but that of a country, and brings us forward to a grown-up Raheen and Karim drawn back to each other in the city that is their true home.
Dielectrics in Nanosystems -and- Graphene, Ge/III-V, Nanowires and Emerging Materials for Post-CMOS Applications 3
This issue of ECS Transactions will cover the following topics in (a) Graphene Material Properties, Preparation, Synthesis and Growth; (b) Metrology and Characterization of Graphene; (c) Graphene Devices and Integration; (d) Graphene Transport and mobility enhancement; (e) Thermal Behavior of Graphene and Graphene Based Devices; (f) Ge & III-V devices for CMOS mobility enhancement; (g) III.V Heterostructures on Si substrates; (h) Nano-wires devices and modeling; (i) Simulation of devices based on Ge, III-V, nano-wires and Graphene; (j) Nanotechnology applications in information technology, biotechnology and renewable energy (k) Beyond CMOS device structures and properties of semiconductor nano-devices such as nanowires; (l) Nanosystem fabrication and processing; (m) nanostructures in chemical and biological sensing system for healthcare and security; and (n) Characterization of nanosystems; (f) Nanosystem modeling.
Pandita Ramabai's American Encounter
"... [A] rare and remarkable insight into an Indian woman's take on American culture in the 19th century, refracted through her own experiences with British colonialism, Indian nationalism, and Christian culture on no less than three continents.... a fabulous resource for undergraduate teaching." -- Antoinette Burton In the 1880s, Pandita Ramabai traveled from India to England and then to the U.S., where she spent three years immersed in the milieu of progressive social reform movements of the day. Born into a Brahmin family and widowed while still young, she converted to Christianity while in England. In India, she was an activist for the education of women and the improvement of the status...
The Accidental Zillionaire
The first in-depth look at one of the world's richest-and most secretive-businessmen Though his wealth is certainly no secret, the world's fourth richest man remains an enigma. Paul Allen made his fortune as Bill Gates's partner in Microsoft, supplemented it with questionable, though often profitable, venture capital schemes, and has since invested his wealth in a widely divergent list of interests. He owns the NBA's Portland Trailblazers and the NFL's Seattle Seahawks. Among hundreds of smaller ventures, he is a primary stakeholder in the film production company DreamWorks SKG and formerly held a large piece of the widely despised Ticketmaster monopoly. Dubbed the "Accidental Zillionaire" b...
Graphene, Ge/III-V, and Emerging Materials for Post-CMOS Applications 2
This issue of ECS Transactions addresses the fundamental material science, characterization, modeling and applications of Graphene, Ge-III-V and Emerging materials designed for alternatives technologies to replace CMOS.
THE INDIAN LISTENER
The Indian Listener (fortnightly programme journal of AIR in English) published by The Indian State Broadcasting Service,Bombay ,started on 22 december, 1935 and was the successor to the Indian Radio Times in english, which was published beginning in July 16 of 1927. From 22 August ,1937 onwards, it was published by All India Radio,New Delhi.In 1950,it was turned into a weekly journal. Later,The Indian listener became "Akashvani" in January 5, 1958. It was made a fortnightly again on July 1,1983. It used to serve the listener as a bradshaw of broadcasting ,and give listener the useful information in an interesting manner about programmes,who writes them,take part in them and produce them along with photographs of performing artists. It also contains the information of major changes in the policy and service of the organisation. NAME OF THE JOURNAL: The Indian Listener LANGUAGE OF THE JOURNAL: English DATE,MONTH & YEAR OF PUBLICATION: 22-10-1939 PERIODICITY OF THE JOURNAL: Fortnightly NUMBER OF PAGES: 68 VOLUME NUMBER: Vol. IV, No. 21. BROADCAST PROGRAMME SCHEDULE PUBLISHED(PAGE NOS): 1481-1540 Document ID: INL-1939 (J-D) Vol- II (09)
Physics and Technology of High-k Gate Dielectrics 4
This issue covers, in detail, all aspects of the physics and the technology of high dielectric constant gate stacks, including high mobility substrates, high dielectric constant materials, processing, metals for gate electrodes, interfaces, physical, chemical, and electrical characterization, gate stack reliability, and DRAM and non-volatile memories.
