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Kartography
Crib mates, raised together from birth, narrator Raheen and her best friend Karim dream each other's dreams, finish each other's sentences, speak in a language of anagrams. They share an idyllic childhood in upper-class Karachi with parents who are also best friends, even once engaged to the other until they rematched in what they jokingly call the fiancee swap. The night Karim's family migrates from Karachi to London, Raheen knows that some of my tears were his tears and some of his tears were mine. But as distance and adolescence split them apart, Karim takes refuge in the rationality of maps while Raheen searches for the secret behind her parents' exchange. What she uncovers takes us back two decades to reveal a story not just of a family's turbulent history but that of a country, and brings us forward to a grown-up Raheen and Karim drawn back to each other in the city that is their true home.
Atomic Layer Deposition Applications 4
The continuously expanding realm of Atomic Layer Deposition (ALD) Applications is the symposium focus. ALD can enable the precise deposition of ultra-thin, highly conformal coatings over complex 3D topography, with controlled composition and properties. This issue of the ECS Transactions contains peer reviewed papers presented at the symposium. Breadths of ALD Applications are featured: novel nano-composites and nanostructures, dielectrics for state-of-the-art transistors and capacitors, optoelectronics and a variety of other emerging applications.
Dielectrics in Nanosystems -and- Graphene, Ge/III-V, Nanowires and Emerging Materials for Post-CMOS Applications 3
This issue of ECS Transactions will cover the following topics in (a) Graphene Material Properties, Preparation, Synthesis and Growth; (b) Metrology and Characterization of Graphene; (c) Graphene Devices and Integration; (d) Graphene Transport and mobility enhancement; (e) Thermal Behavior of Graphene and Graphene Based Devices; (f) Ge & III-V devices for CMOS mobility enhancement; (g) III.V Heterostructures on Si substrates; (h) Nano-wires devices and modeling; (i) Simulation of devices based on Ge, III-V, nano-wires and Graphene; (j) Nanotechnology applications in information technology, biotechnology and renewable energy (k) Beyond CMOS device structures and properties of semiconductor nano-devices such as nanowires; (l) Nanosystem fabrication and processing; (m) nanostructures in chemical and biological sensing system for healthcare and security; and (n) Characterization of nanosystems; (f) Nanosystem modeling.
The Accidental Zillionaire
The first in-depth look at one of the world's richest-and most secretive-businessmen Though his wealth is certainly no secret, the world's fourth richest man remains an enigma. Paul Allen made his fortune as Bill Gates's partner in Microsoft, supplemented it with questionable, though often profitable, venture capital schemes, and has since invested his wealth in a widely divergent list of interests. He owns the NBA's Portland Trailblazers and the NFL's Seattle Seahawks. Among hundreds of smaller ventures, he is a primary stakeholder in the film production company DreamWorks SKG and formerly held a large piece of the widely despised Ticketmaster monopoly. Dubbed the "Accidental Zillionaire" b...
Graphene, Ge/III-V, and Emerging Materials for Post-CMOS Applications 2
This issue of ECS Transactions addresses the fundamental material science, characterization, modeling and applications of Graphene, Ge-III-V and Emerging materials designed for alternatives technologies to replace CMOS.
Physics and Technology of High-k Gate Dielectrics 4
This issue covers, in detail, all aspects of the physics and the technology of high dielectric constant gate stacks, including high mobility substrates, high dielectric constant materials, processing, metals for gate electrodes, interfaces, physical, chemical, and electrical characterization, gate stack reliability, and DRAM and non-volatile memories.
Handbook of Semiconductor Manufacturing Technology
Retaining the comprehensive and in-depth approach that cemented the bestselling first edition's place as a standard reference in the field, the Handbook of Semiconductor Manufacturing Technology, Second Edition features new and updated material that keeps it at the vanguard of today's most dynamic and rapidly growing field. Iconic experts Robert Doering and Yoshio Nishi have again assembled a team of the world's leading specialists in every area of semiconductor manufacturing to provide the most reliable, authoritative, and industry-leading information available. Stay Current with the Latest Technologies In addition to updates to nearly every existing chapter, this edition features five enti...
Graphene and Emerging Materials for Post-CMOS Applications
The objectives of this symposium was to address all current and future issues related to ¿Emerging Materials For Post-CMOS Applications.¿ The symposium focused on fundamental material science, characterization and applications of emerging materials designed for alternatives technologies to replace CMOS. Special emphasis was placed on ¿Beyond CMOS¿ integration schemes, technology development and on the impact of non-traditional materials into nanoelectronics.
