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For this new edition, the chapters on photography and the electron microscope have been completely rewritten and two new chapters have been added--on immuno electron microscopy using colloidal gold and on useful specialized techniques.
This book presents a unified view of the rapidly growing field of scanning tunneling microscopy and its many derivatives. After examining novel scanning-probe techniques and the instrumentation and methods, the book provides detailed accounts of STM applications. It examines limitations of the present-day investigations and provides insight into further trends. "I strongly recommend that Professor Bai's book be a part of any library that serves surface scientists, biochemists, biophysicists, material scientists, and students of any science or engineering field...There is no doubt that this is one of the better (most thoughtful) texts." Journal of the American Chemical Society (Review of 1/e)
This volume documents the first International Workshop on Atomic Scale Interconnection Machines organised by the European Integrated Project AtMol in June 2011 in Singapore. The four sessions, discussed here in revised contributions by high level speakers, span the subjects of multi-probe UHV instrumentation, atomic scale nano-material nanowires characterization, atomic scale surface conductance measurements, surface atomic scale mechanical machineries. This state-of-the-art account brings academic researchers and industry engineers access to the tools they need to be at the forefront of the atomic scale technology revolution.
Interface and surface science have been important in the development of semicon ductor physics right from the beginning on. Modern device concepts are not only based on p-n junctions, which are interfaces between regions containing different types of dopants, but take advantage of the electronic properties of semiconductor insulator interfaces, heterojunctions between distinct semiconductors, and metal semiconductor contacts. The latter ones stood almost at the very beginning of semi conductor physics at the end of the last century. The rectifying properties of metal-semiconductor contacts were first described by Braun in 1874. A physically correct explanation of unilateral conduction, as this deviation from Ohm's law was called, could not be given at that time. A prerequisite was Wilson's quantum theory of electronic semi-conductors which he published in 1931. A few years later, in 1938, Schottky finally explained the rectification at metal-semiconductor contacts by a space-
This volume contains the proceedings of the conference on "Atomic and Nanometer Scale Modification of Materials: Fundamentals and Applications" which was co-sponsored by NATO and the Engineering Foundation, and took place in Ventura, California in August 1992. The goal of the organizers was to bring together and facilitate the exchange of information and ideas between researchers involved in the development of techniques for nanometer-scale modification and manipulation. theorists investigating the fundamental mech anisms of the processes involved in modification, and scientists studying the properties and applications of nanostructures. About seventy scientists from all over the world parti...
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George Boone IV (1690-1753), a Quaker, emigrated from England to Abington, Philadelphia County, Pennsylvania, married Deborah Howell in 1713, and moved to Berks County, Pennsylvania. Descendants lived in Pennsylvania, Ohio, Kentucky, Tennessee, Texas, New Mexico, Colorado, California and elsewhere.