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Nanosilicon
Properties of nanosilicon in the form of nanoparticles, nanowires, nanotubes, and as porous material are of great interest. They can be used in finding suitable components for future miniature devices, and for the more exciting possibilities of novel optoelectronic applications due to bright luminescence from porous silicon, nanoparticles and nanowires. New findings from research into metal encapsulated clusters, silicon fullerenes and nanotubes have opened up a new paradigm in nanosilicon research and this could lead to large scale production of nanoparticles with control on size and shape as well as novel quasi one-dimensional structures. There are possibilities of using silicon as an opti...
Device Applications of Silicon Nanocrystals and Nanostructures
Recent developments in the technology of silicon nanocrystals and silicon nanostructures, where quantum-size effects are important, are systematically described including examples of device applications. Due to the strong quantum confinement effect, the material properties are freed from the usual indirect- or direct-bandgap regime, and the optical, electrical, thermal, and chemical properties of these nanocrystalline and nanostructured semiconductors are drastically changed from those of bulk silicon. In addition to efficient visible luminescence, various other useful material functions are induced in nanocrystalline silicon and periodic silicon nanostructures. Some novel devices and applications, in fields such as photonics (electroluminescence diode, microcavity, and waveguide), electronics (single-electron device, spin transistor, nonvolatile memory, and ballistic electron emitter), acoustics, and biology, have been developed by the use of these quantum-induced functions in ways different from the conventional scaling principle for ULSI.
Emerging Technologies for In Situ Processing
Proceedings of the NATO Advanced Research Workshop, Cargèse, France, May 4-8, 1987
Foundations Of Quantum Mechanics In The Light Of New Technology: Selected Papers From The Proceedings Of The First Through Fourth International Symposia On Foundations Of Quantum Mechanics
”I re-experience once again the stimulating atmosphere of each of the ISQMs: There were theoretical discussions in diverse frontier areas of physics as well as descriptions of beautiful new (or planned) experiments and technologies. From each of the Symposia I always came away with the exciting feeling of how wonderful physics is and how lucky it is to be a physicist in this era.”Chen Ning YangThis volume is selected from the First through Fourth International Symposia on Foundations of Quantum Mechanics. The International Symposia on Foundations of Quantum Mechanics in the Light of New Technology (ISQMs) provide a unique interdisciplinary forum where distinguished theorists and experimentalists of diverse fields of research gather to discuss basic problems in quantum mechanics in the light of new technology. This volume collects 51 papers selected from over 200 papers by many distinguished scientists. It includes articles by C N Yang, J A Wheeler, Y Nambu, L Esaki and M P A Fisher, to name just a few, and contains topics ranging from quantum measurements to quantum cosmology.
Science and Engineering of One- and Zero-Dimensional Semiconductors
This volume comprises the proceedings of the NATO Advanced Research Workshop on the Science and Engineering of 1- and O-dimensional semiconductors held at the University of Cadiz from 29th March to 1st April 1989, under the auspices of the NATO International Scientific Exchange Program. There is a wealth of scientific activity on the properties of two-dimensional semiconductors arising largely from the ease with which such structures can now be grown by precision epitaxy techniques or created by inversion at the silicon-silicon dioxide interface. Only recently, however, has there burgeoned an interest in the properties of structures in which carriers are further confined with only one or, in...
Sub-Half-Micron Lithography for ULSIs
Original figures and tables are presented to highlight the key issues and recent developments." "This book will be of value to graduate students studying semiconductor-device fabrication, to engineers engaged in such fabrication and to designers of ULSI devices."--Jacket.
Index Medicus
Vols. for 1963- include as pt. 2 of the Jan. issue: Medical subject headings.
Basic Properties of Semiconductors
Since Volume 1 was published in 1982, the centres of interest in the basic physics of semiconductors have shifted. Volume 1 was called Band Theory and Transport Properties in the first edition, but the subject has broadened to such an extent that Basic Properties is now a more suitable title. Seven chapters have been rewritten by the original authors. However, twelve chapters are essentially new, with the bulk of this work being devoted to important current topics which give this volume an almost encyclopaedic form. The first three chapters discuss various aspects of modern band theory and the next two analyze impurities in semiconductors. Then follow chapters on semiconductor statistics and...
