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Ferroic materials are important, not only because of the improved understanding of condensed matter, but also because of their present and potential device applications. This book presents a unified description of ferroic materials at an introductory level, with the unifying factor being the occurrence of nondisruptive phase transitions in crystals that alter point-group symmetry. The book also aims to further systemitize the subject of ferroic materials, employing some formal, carefully worded, definitions and classification schemes. The basic physical principles leading to the wide-ranging applications of ferroic materials are also explained, while placing extra emphasis on the utilitarian role of symmetry in materials science.
Present-day scienceand technology have become increasingly based on studies and applications of thin films. This is especiallytrue of solid-state physics, semiconduc tor electronics, integrated optics, computer science, and the like. In these fields, it is necessary to use filmswith an ordered structure, especiallysingle-crystallinefilms, because physical phenomena and effects in such films are most reproducible. Also, active parts of semiconductor and other devices and circuits are created, as a rule, in single-crystal bodies. To date, single-crystallinefilms have been mainly epitaxial (or heteroepitaxial); i.e., they have been grown on a single-crystalline substrate, and principal trends, ...
The present volume continues the tradition of previous issues in covering all the main divisions in the science of crystal growth: growth from vapor, solution, and melt. At the same time, it reflects the recent tendency to more detailed research on solid -state crystal lization. In compiling the collection, preference has been given to papers that not only present novel scientific results but also contain surveys of the published data, although certain of the papers are purely original ones and some are purely of review character. The need for these surveys is dictated by at least two circumstances. First, there is an ongoing expan sion of specialized publications on crystal growth and, correspondingly, there is an increase in the volume of the publications requiring review. Second, rapid advances in crystal mak ing for various purposes (particularly microelectronics and quantum electronics) have meant that many important facts and observations on crystal formation are dispersed in numerous unspecialized publications and thus in part are lost to fundamental science.
Solid State Physics
In a uniform and comprehensive manner the authors describe all the important aspects of the epitaxial growth processes of solid films on crystalline substrates, e.g. processes in which atoms of the growing film mimic the arrangement of the atoms of the substrate. Emphasis is put on sufficiently fundamental and unequivocal presentation of the subject in the form of an easy-to-read review. A large part of this book focuses on the problems of heteroepitaxy. The most important epitaxial growth techniques which are currently widely used in basic research as well as in manufacturing processes of devices are presented and discussed in detail.
Written for physicists, chemists, and engineers specialising in crystal and film growth, semiconductor electronics, and various applications of thin films, this book reviews promising scientific and engineering trends in thin films and thin-films materials science. The first part discusses the physical characteristics of the processes occurring during the deposition and growth of films, the principal methods of obtaining semiconductor films and of reparing substrate surfaces on which crystalline films are grown, and the main applications of films. The second part contains data on epitaxial interfaces and on ways of reducing transition regions in films and film-type devices, on the processes of crystallization and recrystallization of amorphous films, and on thermodynamic conditions, mechanisms and kinetic parameters of accelerated crystallization.
Semiconductors and dielectrics are two essential materials found in cell phones and computers, for example, and both are manufactured by growing crystals. Edited by the organizers of the International Workshop on Crystal Growth Technology, this ready reference is essential reading for materials scientists, chemists, physicists, computer hardware manufacturers, engineers, and those working in the chemical and semiconductor industries. They have assembled an international team of experts who present the current challenges, latest methods and new applications for producing these materials necessary for the electronics industry using bulk crystal growth technology. From the contents: * General aspects of crystal growth technology * Compound semiconductors * Halides and oxides * Crystal growth for sustaining energy * Crystal machining
This referenced compilation of magnetic transition temperatures represents (with the Addendum) papers actually received by the RMIC through May 1972 and consists of two lists (alphabetical by compounds), one for Curie and one for Neel temperatures. Where different values appeared in the literature for a single compound, all are listed with sepa rate references given for each. There is no attempt at critical evaluation, which, except for a few welt-studied and well characterized materials, would hardly be worth the effort. All that one can say for most of the compounds is that for a given material with a certain (or all too often uncertain) history of preparati'on and treatment, stoichiometry...