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Oriented Crystallization on Amorphous Substrates
Present-day scienceand technology have become increasingly based on studies and applications of thin films. This is especiallytrue of solid-state physics, semiconduc tor electronics, integrated optics, computer science, and the like. In these fields, it is necessary to use filmswith an ordered structure, especiallysingle-crystallinefilms, because physical phenomena and effects in such films are most reproducible. Also, active parts of semiconductor and other devices and circuits are created, as a rule, in single-crystal bodies. To date, single-crystallinefilms have been mainly epitaxial (or heteroepitaxial); i.e., they have been grown on a single-crystalline substrate, and principal trends, ...
Growth of Crystals
The present volume continues the tradition of previous issues in covering all the main divisions in the science of crystal growth: growth from vapor, solution, and melt. At the same time, it reflects the recent tendency to more detailed research on solid -state crystal lization. In compiling the collection, preference has been given to papers that not only present novel scientific results but also contain surveys of the published data, although certain of the papers are purely original ones and some are purely of review character. The need for these surveys is dictated by at least two circumstances. First, there is an ongoing expan sion of specialized publications on crystal growth and, correspondingly, there is an increase in the volume of the publications requiring review. Second, rapid advances in crystal mak ing for various purposes (particularly microelectronics and quantum electronics) have meant that many important facts and observations on crystal formation are dispersed in numerous unspecialized publications and thus in part are lost to fundamental science.
Growth of Crystals
This tenth volume completes the first series of "Growth of Crystals," which began in 1957. The sources of the volumes are as follows: for Vol. I, the 1st All-Union Conference on Crystal Growth; for Vol. 3, the 2nd; and for Vols. 5 and 6, the 3rd; Vols. 7 and 8 reported the International Symposium on Crystal Growth at the Seventh International Crystallography Con gress, and Vol. 9 the 1969 symposium on crystal growth dedicated to E. S. Fedorov; Vols. 2, 4, and 10 did not originate in conferences. The main problem that largely occupied the conferences and symposia and also the inter mediate volumes was that of real crystal formation, as well as the relation of crystal growth theory to practica...
Introduction to Ferroic Materials
Ferroic materials are important, not only because of the improved understanding of condensed matter, but also because of their present and potential device applications. This book presents a unified description of ferroic materials at an introductory level, with the unifying factor being the occurrence of nondisruptive phase transitions in crystals that alter point-group symmetry. The book also aims to further systemitize the subject of ferroic materials, employing some formal, carefully worded, definitions and classification schemes. The basic physical principles leading to the wide-ranging applications of ferroic materials are also explained, while placing extra emphasis on the utilitarian role of symmetry in materials science.
Growth of Crystals
The first volume in the present series contained the papers read at the first conference on crystal growth. This second volume appears during the interval between the first and second conferences, and contains various papers on crystal growth, in addition to the late S. K. Popov's major contribution on growing synthetic corundum. The papers to some extent represent work that has been done in the USSR since the first conference. Some of the papers break entirely fresh ground. We hope that the series will act as a means of contact between Soviet scientists who work on crystal growth, or on producing technically important monocrystals. This contact between scientists is essential. Work on this ...
Crystal Growth Technology
Semiconductors and dielectrics are two essential materials found in cell phones and computers, for example, and both are manufactured by growing crystals. Edited by the organizers of the International Workshop on Crystal Growth Technology, this ready reference is essential reading for materials scientists, chemists, physicists, computer hardware manufacturers, engineers, and those working in the chemical and semiconductor industries. They have assembled an international team of experts who present the current challenges, latest methods and new applications for producing these materials necessary for the electronics industry using bulk crystal growth technology. From the contents: * General aspects of crystal growth technology * Compound semiconductors * Halides and oxides * Crystal growth for sustaining energy * Crystal machining
Epitaxy
In a uniform and comprehensive manner the authors describe all the important aspects of the epitaxial growth processes of solid films on crystalline substrates, e.g. processes in which atoms of the growing film mimic the arrangement of the atoms of the substrate. Emphasis is put on sufficiently fundamental and unequivocal presentation of the subject in the form of an easy-to-read review. A large part of this book focuses on the problems of heteroepitaxy. The most important epitaxial growth techniques which are currently widely used in basic research as well as in manufacturing processes of devices are presented and discussed in detail.
Bibliography of Magnetic Materials and Tabulation of Magnetic Transition Temperatures
This referenced compilation of magnetic transition temperatures represents (with the Addendum) papers actually received by the RMIC through May 1972 and consists of two lists (alphabetical by compounds), one for Curie and one for Neel temperatures. Where different values appeared in the literature for a single compound, all are listed with sepa rate references given for each. There is no attempt at critical evaluation, which, except for a few welt-studied and well characterized materials, would hardly be worth the effort. All that one can say for most of the compounds is that for a given material with a certain (or all too often uncertain) history of preparati'on and treatment, stoichiometry...
РОСТ КРИСТАЛЛОВ/Rost Kristallov/Growth of Crystals
For 50 years the Fedorov Institute of Crystallography, Mineralogy, and Petrography at Leningrad Mining Institute has held annual memorial meetings for E. S. Fedorov. Immediate ly after the jubilee meeting (May 21-24, 1969), the Fedorov All-Union Symposium on Crystal Growth was held, and the proceedings of that symposium constitute Volume 9 of Growth of Crystals. The symposium surveyed the advances made in the USSR in those aspects of growth con cerned mainly with morphology and structure in natural crystals or closely related artificial ones, work which confirmed their relation to E. S. Fedorov and to mineralogical crystallogra phy. Crystallography is one of the older branches of natural sci...
