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Deep Centers in Semiconductors
Examines several key semiconductor deep centers, all carefully chosen to illustrate a variety of essential concepts. A deep center is a lattice defect or impurity that causes very localized bound states and energies deep in the band gap. For each deep center chosen, a scientist instrumental in its development discusses the theoretical and experimental techniques used to understand that center. The second edition contains four new sections treating recent developments, including a chapter on hydrogen in crystalline semiconductors. Annotation copyright by Book News, Inc., Portland, OR
Excitons
Contents: Cho, K.: Introduction. - Cho, K.: Internal Structure of Excitons. - Dean, P. J. /A¬01Herbert, D. C.A¬02: Bound Excitons in A¬Semiconductors. - Fischer, B. /Lagois, J.: Surface Exciton Polaritons. - Yu, P. Y.: Study of Excitons and Exciton-Phonon Interactions by Resonant Raman and Brillouin Spectroscopies.
Collective Excitations in Solids
This book presents an ac count of the NATO Advanced Study Institute on "Collective Excitations in Solids," held in Erice, Italy, from June 15 to June 29, 1981. This meeting was organized by the International School of Atomic and Molecular Spectroscopy of the "Ettore Majorana" Centre for Scientific Culture. The objective of the Institute was to formulate a unified and coherent treatment of various collective excitation processes by drawing on the current advances in various branches of the physics of the solid state. A total of 74 participants came from 54 laboratories and 20 nations (Australia, Belgium, Burma, Canada, China, France, F. R. Germany, Greece, Israel, Italy, Mexico, The Netherlands, Pakistan, Poland, Portugal, Romania, Switzerland, Turkey, The Uni ted Kingdom, and The United States). The secretaries of the course were: Joseph Danko for the scientific aspects and Nino La Francesca for the administrative aspects of the meeting. Fourty-four lectures divided in eleven series were given. Nine "long" seminars and eight "short" seminars were also presented. In addition, two round-table discussions were held.
Handbook of Human Performance Technology
The first two editions of the Handbook of Human Performance Technology helped define the rapidly growing and vibrant field of human performance technology - a systematic approach to improving individual and organizational performance. Exhaustively researched, this comprehensive sourcebook not only updates key foundational chapters on organizational change, evaluation, instructional design, and motivation, but it also features breakthrough chapters on "performance technology in action" and addresses many new topics in the field, such as certification, Six Sigma, and communities of practice. Boasting fifty-five new chapters, contributors to this new edition comprise a veritable "who's who" in ...
Properties, Growth and Applications of Diamond
Recent breakthroughs in the synthesis of diamond have led to increased availability at lower cost. This has spurred R&D into its characterization and application in machine tools, optical coatings, X-ray windows and light-emitting optoelectronic devices. This book draws together expertise from some 60 researchers in Europe and the USA working on bulk and thin film diamond. All fully refereed, the contributions are combined to form a highly structured volume with reviews, evaluations, tables and illustrative material, together with expert guidance to the literature.
III-Nitride Semiconductors
This second part presents a comprehensive overview of fundamental optical properties of the III Nitride Semiconductor. All optoelectronic applications based on III-nitrides are due to their unique optical properties and characterizations of III-nitrides. Much information, which is critical to the design and improvement of optoelectronic devices based on III-nitrides has been obtained in the last several years. This is the second of a two part Volume in the seriesOptoelectronic Properties of Semiconductors and Superlattices.
Properties of Silicon Carbide
This well structured and fully indexed book helps to understand and fully characterize the SiC system.
