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Quantum Dots: Fundamentals, Applications, and Frontiers
This volume contains papers delivered at a NATO Advanced Research Workshop and provides a broad introduction to all major aspects of quantum dot structures. Such structures have been produced for studies of basic physical phenomena, for device fabrication and, on a more speculative level, have been suggested as components of a solid-state realization of a quantum computer. The book is structured so that the reader is introduced to the methods used to produce and control quantum dots, followed by discussions of their structural, electronic, and optical properties. It concludes with examples of how their optical properties can be used in practical devices, including lasers and light-emitting diodes operating at the commercially important wavelengths of 1.3 Am and 1.55 Am."
IUTAM Symposium on Modelling Nanomaterials and Nanosystems
Recent interest in nanotechnology is challenging the community to analyse, develop and design nanometer to micrometer-sized devices for applications in new generations of computer, electronics, photonics and drug delivery systems. To successfully design and fabricate novel nanomaterials and nanosystems, we must necessarily bridge the gap in our understanding of mechanical properties and processes at length scales ranging from 100 nanometers (where atomistic simulations are currently possible) to a micron (where continuum mechanics is experimentally validated). For this purpose the difficulties and complexity originate in the substantial differences in philosophy and viewpoints between conventional continuum mechanics and quantum theories. The challenge lies in how to establish the relationship between a continuum mechanical system and its atomistic counterpart in order to define continuum variables that are calculable within an atomic system.
Silicon-Germanium Carbon Alloys
Carbon (C) and Silicon Germanium (SiGe) work like a magic sauce. At least in small concentrations, they make everything taste better. It is remarkable enough that SiGe, a new material, and the heterobipolar transistor, a new device, appear on the brink of impacting the exploding wireless market. The addition of C to SiGe, albeit in small concentrations, looks to have breakthrough potential. Here, at last, is proof that materials science can put a rocket booster on the silicon-mind, the silicon transistor. Scientific excitement arises, as always, from the new possibilities a multicomponent materials system offers. Bandgaps can be changed, strains can be tuned, and properties can be tailored. This is catnip to the materials scientist. The wide array of techniques applied here to the SiGeC system bear testimony to the ingenious approaches now available for mastering the complexities of new materials
Physics Of Semiconductors - Proceedings Of The 20th International Conference (In 3 Volumes)
Gathering top experts in the field, the 20th ICPS proceedings reviews the progress in all aspects of semiconductor physics. The proceedings will include state-of-the-art lectures with special emphasis on exciting new developments. It should serve as excellent material for researchers in this and related fields.
Physics Briefs
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Design and Development of Nanostructured Thin Films
Due to their unique size-dependent physicochemical properties, nanostructured thin films are used in a wide range of applications from smart coating and drug delivery to electrocatalysis and highly-sensitive sensors. Depending on the targeted application and the deposition technique, these materials have been designed and developed by tuning their atomic-molecular 2D- and/or 3D-aggregation, thickness, crystallinity, and porosity, having effects on their optical, mechanical, catalytic, and conductive properties. Several open questions remain about the impact of nanomaterial production and use on environment and health. Many efforts are currently being made not only to prevent nanotechnologies...
Applied RHEED
The book describes RHEED (reflection high-energy electron diffraction) used as a tool for crystal growth. New methods using RHEED to characterize surfaces and interfaces during crystal growth by MBE (molecular beam epitaxy) are presented. Special emphasis is put on RHEED intensity oscillations, segregation phenomena, electron energy-loss spectroscopy and RHEED with rotating substrates.
Elementary Electronic Structure
This is a revised edition of the 1999 text on the electronic structure and properties of solids, similar in spirit to the well-known 1980 text Electronic Structure and the Properties of Solids. The revisions include an added chapter on glasses, and rewritten sections on spin-orbit coupling, magnetic alloys, and actinides. The text covers covalent semiconductors, ionic insulators, simple metals, and transition-metal and f-shell-metal systems. It focuses on the most important aspects of each system, making what approximations are necessary in order to proceed analytically and obtain formulae for the properties. Such back-of-the-envelope formulae, which display the dependence of any property on...
