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Process and Device Simulation for MOS-VLSI Circuits
Proceedings of the NATO Advanced Study Institute on Process and Device Simulation for MOS-VLSI Circuits, Sogesta, Urbino, Italy, July 12-23, 1982
Los Alamos Science
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Research in Progress
Vols. for 1977- consist of two parts: Chemistry, biological sciences, engineering sciences, metallurgy and materials science (issued in the spring); and Physics, electronics, mathematics, geosciences (issued in the fall).
Research in Progress
None
Official Register
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