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Gallium Nitride Electronics
This book is based on nearly a decade of materials and electronics research at the leading research institution on the nitride topic in Europe. It is a comprehensive monograph and tutorial that will be of interest to graduate students of electrical engineering, communication engineering, and physics; to materials, device, and circuit engineers in research and industry; to all scientists with a general interest in advanced electronics.
Fundamentals of RF and Microwave Techniques and Technologies
The increase of consumer, medical and sensors electronics using radio frequency (RF) and microwave (MW) circuits has implications on overall performances if design is not robust and optimized for a given applications. The current and later generation communication systems and Internet of Thing (IoT) demand for robust electronic circuits with optimized performance and functionality, but low cost, size, and power consumption. As a result, there is a need for a textbook that provides a comprehensive treatment of the subject. This book provides state-of-the-art coverage of RF and Microwave Techniques and Technologies, covers important topics: transmission-line theory, passive and semiconductor d...
Analysis and Simulation of Heterostructure Devices
The topic of this monograph is the physical modeling of heterostructure devices. A detailed discussion of physical models and parameters for compound semiconductors is presented including the relevant aspects of modern submicron heterostructure devices. More than 25 simulation examples for different types of Si(Ge)-based, GaAs-based, InP-based, and GaN-based heterostructure bipolar transistors (HBTs) and high electron mobility transistors (HEMTs) are given in comparison with experimental data from state-of-the-art devices.
Nonlinear Differential Equation Models
The papers in this book originate from lectures which were held at the "Vienna Workshop on Nonlinear Models and Analysis" – May 20–24, 2002. They represent a cross-section of the research field Applied Nonlinear Analysis with emphasis on free boundaries, fully nonlinear partial differential equations, variational methods, quasilinear partial differential equations and nonlinear kinetic models.
GaN-Based Tri-Gate High Electron Mobility Transistors.
The rapidly-growing data throughput rates in a wide range of wireless communication applications are pushing the established semiconductor device technologies to their limits. Considerably higher levels of solid-state output power will therefore be needed to meet the demand in the next generation satellite communications as well as the RADAR systems. Owing to their superior material properties such as high breakdown fields and peak electron velocities, GaN-based high electron mobility transistors (HEMTs) have recently prevailed in high-power systems operating in the microwave frequency bands. On the other hand at the millimetre-wave (MMW) and sub-MMW frequencies, highly-scaled GaN HEMTs are prone to experiencing deteriorated high frequency characteristics which severely limit the high-power performance. In an attempt to overcome this, 3-dimensional GaN HEMT devices featuring the Tri-gate topology are developed in this work, exhibiting enhanced performance in terms of both off- and on-state figures of merit. The demonstrated results promote the great potential of Tri-gate GaN HEMTs for both MMW power amplifier and high-speed logic applications.
Intrinsic Point Defects, Impurities, and Their Diffusion in Silicon
This book contains the first comprehensive review of intrinsic point defects, impurities and their complexes in silicon. Besides compiling the structures, energetic properties, identified electrical levels and spectroscopic signatures, and the diffusion behaviour from investigations, it gives a comprehensive introduction into the relevant fundamental concepts.
AlGaN/GaN-HEMT power amplifiers with optimized power-added efficiency for X-band applications
This work has arisen out of the strong demand for a superior power-added efficiency (PAE) of AlGaN/GaN high electron mobility transistor (HEMT) high-power amplifiers (HPAs) that are part of any advanced wireless multifunctional RF-system with limited prime energy. Different concepts and approaches on device and design level for PAE improvements are analyzed, e.g. structural and layout changes of the GaN transistor and advanced circuit design techniques for PAE improvements of GaN HEMT HPAs.
