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During the last decade, novel graphene related materials (GRMs), perovskites, as well as metal oxides and other metal nanostructures have received the interest of the scientific community. Due to their extraordinary physical, optical, thermal, and electrical properties, which are correlated with their 2D ultrathin atomic layer structure, large interlayer distance, ease of functionalization, and bandgap tunability, these nanomaterials have been applied in the development or the improvement of innovative optoelectronic applications, as well as the expansion of theoretical studies and simulations in the fast-growing fields of energy (photovoltaics, energy storage, fuel cells, hydrogen storage, ...
Since its invention, the integrated circuit has necessitated new process modules and numerous architectural changes to improve application performances, power consumption, and cost reduction. Silicon CMOS is now well established to offer the integration of several tens of billions of devices on a chip or in a system. At present, there are important challenges in the introduction of heterogeneous co-integration of materials and devices with the silicon CMOS 2D- and 3D-based platforms. New fabrication techniques allowing strong energy and variability efficiency come in as possible players to improve the various figures of merit of fabrication technology. Integrated Nanodevice and Nanosystem Fa...
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