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Advances in Solid State Physics
Volume 43 of Advances in Solid State Physics contains the written versions of most of the plenary and invited lectures of the Spring Meeting of the Condensed Matter Physics section of the Deutsche Physikalische Gesellschaft held from March 24 to 28, 2003 in Dresden, Germany. Many of the topical talks given at the numerous and very lively symposia are also included. They covered an extremely interesting selection of timely subjects. Thus the book truly reflects the status of the field of solid state physics in 2003, and explains its attractiveness, not only in Germany but also internationally.
Progress in Nonequilibrium Green's Functions
Equilibrium and nonequilibrium properties of correlated many-body systems are of growing interest in many fields of physics, including condensed matter, dense plasmas, nuclear matter and particles. The most powerful and general method which applies equally to all these areas is given by quantum field theory.Written by the leading experts and understandable to non-specialists, this book provides an overview on the basic ideas and concepts of the method of nonequilibrium Green's functions. It is complemented by modern applications of the method to a variety of topics, such as optics and transport in dense plasmas and semiconductors; correlations, bound states and coherence; strong field effects and short-pulse lasers; nuclear matter and QCD.Authors include: Gordon Bayan, Pawel Danielewicz, Don DuBois, Hartmut Haug, Klaus Henneberger, Antti-Pekka Jauho, Jrn Kuoll, Dietrich Kremp, Pavel Lipavsky and Paul C Martin.
Ultrafast Phenomena in Semiconductors
There are many books in the market devoted to the review of certain fields. This book is different from those in that authors not only provide reviews of the fields but also present their own important contributions to the fields in a tutorial way. As a result, researchers who are already in the field of ultrafast dynamics in semicon ductors and its device applications as well as researchers and graduate students just entering the field will benefit from it. This book is made up of recent new developments in the field of ultrafast dynamics in semiconductors. It consists of nine chapters. Chapter 1 reviews a mi croscopic many-body theory which allows one to compute the linear and non-linear o...
Computational Electronics
Large computational resources are of ever increasing importance for the simulation of semiconductor processes, devices and integrated circuits. The Workshop on Computational Electronics was intended to be a forum for the dis cussion of the state-of-the-art of device simulation. Three major research areas were covered: conventional simulations, based on the drift-diffusion and the hydrodynamic models; Monte Carlo methods and other techniques for the solution of the Boltzmann transport equation; and computational approaches to quantum transport which are relevant to novel devices based on quantum interference and resonant tunneling phenomena. Our goal was to bring together researchers from var...
Transport in Nanostructures
A comprehensive, detailed description of the properties and behaviour of mesoscopic devices.
Fundamentals of Friction and Wear
Readers of this book will become familiar with the concepts and techniques of nanotribology, explained by an international team of scientists and engineers, actively involved and with long experience in this field. Edited by two pioneers in the field, the book is suitable both as a first introduction to this fascinating subject, and also as a reference for researchers wishing to improve their knowledge of nanotribology.
Ultrafast Electronic and Structural Dynamics
Zusammenfassung: This book illustrates advanced technologies for imaging electrons and atoms in action in various forms of matter, from atoms and diatoms to protein molecules and condensed matter. The technologies that are described employ ultrafast pulsed lasers, X-ray free electron lasers, and pulsed electron guns, with pulse durations from femtoseconds, suitable to visualize atoms in action, to attoseconds, needed to visualize ballistic electron motion. Advanced theories, indispensable for understanding such ultrafast imaging and spectroscopy data on electrons and atoms in action, are also described. The book consists of three parts. The first part describes probing methods of attosecond electron dynamics in atoms, molecules, liquids, and solids. The second part describes femtosecond structural dynamics and coupling of structural change and electron motion in molecules and solids The last part is dedicated to ultrafast photophysical processes and chemical reactions of protein molecules responsible for biological functions
Introducing Molecular Electronics
Klaus von Klitzing Max-Planck-Institut fur ̈ Festk ̈ orperforschung, Heisenbergstraße 1, 70569 Stuttgart, Germany Already many Cassandras have prematurely announced the end of the silicon roadmap and yet, conventional semiconductor-based transistors have been continuously shrinking at a pace which has brought us to nowadays cheap and powerful microelectronics. However it is clear that the traditional scaling laws cannot be applied if unwanted tunnel phenomena or ballistic transport dominate the device properties. It is generally expected, that a combination of silicon CMOS devices with molecular structure will dominate the ?eld of nanoelectronics in 20 years. The visionary ideas of atomic...
Quantum Transport in Semiconductors
The majority of the chapters in this volume represent a series of lectures. that were given at a workshop on quantum transport in ultrasmall electron devices, held at San Miniato, Italy, in March 1987. These have, of course, been extended and updated during the period that has elapsed since the workshop was held, and have been supplemented with additional chapters devoted to the tunneling process in semiconductor quantum-well structures. The aim of this work is to review and present the current understanding in nonequilibrium quantum transport appropriate to semiconductors. Gen erally, the field of interest can be categorized as that appropriate to inhomogeneous transport in strong applied f...
Granular Nanoelectronics
The technological means now exists for approaching the fundamentallimiting scales of solid state electronics in which a single carrier can, in principle, represent a single bit in an information flow. In this light, the prospect of chemically, or biologically, engineered molccular-scale structures which might support information processing functions has enticed workers for many years. The one common factor in all suggested molecular switches, ranging from the experimentally feasible proton-tunneling structure, to natural systems such as the micro-tubule, is that each proposed structure deals with individual information carrying entities. Whereas this future molecular electronics faces enormo...
