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Electrochemical Nanotechnology
  • Language: en
  • Pages: 336

Electrochemical Nanotechnology

A new window to local studies of interface phenomena at solid state surfaces has been opened by the development of local probe techniques such as Scanning Tunneling Microscopy (STM) or Atomic Force Microscopy (AFM) and related methods during the past fifteen years. The in-situ application of local probe methods in different systems belongs to modern nanotechnology and has two aspects: an analytical aspect and a preparative aspect. The first aspect covers the application of the local probe methods to characterize thermodynamic, structural and dynamic properties of solid state surfaces and interfaces and to investigate local surface reactions. Two methods which are still in the beginning of their development represent the second aspect: tip and cantilever. They can be used to form defined nano-objects such as molecular or atomic clusters, quantum dots etc. as well as to structure or modify solid state surfaces in the nanometer range. This IUPAC monograph is a comprehensive treatment of both aspects and presents the current state of knowledge. It is written for scientists active in the area of nanotechnology.

State-of-the-Art Program on Compound Semiconductors 50 (SOTAPOCS 50) -and- Processes at the Semiconductor Solution Interface 3
  • Language: en
  • Pages: 447

State-of-the-Art Program on Compound Semiconductors 50 (SOTAPOCS 50) -and- Processes at the Semiconductor Solution Interface 3

This issue of ECS Transactions contain the most recent developments in compound semiconductors encompassing advanced devices, materials growth, characterization, processing, device fabrication, reliability, and other related topics, as well as the most recent developments in processes at the semiconductor/solution interface including etching, oxidation, passivation, film growth, electrochemical and photoelectrochemical processes, electroluminescence, photoluminescence, and other related topics.

Electrochemical Methods of Nanostructure Preparation
  • Language: en
  • Pages: 544

Electrochemical Methods of Nanostructure Preparation

This book summarizes the electrochemical routes of nanostructure preparation in a systematic and didactic manner. It provides a comprehensive overview of electrodeposition, anodization, carbon nanotube preparation and other methods of nanostructure fabrication, combining essential information on the physical background of electrochemistry with materials science aspects of the field. The book includes a brief introduction to general electrochemistry with an emphasis on physico-chemical aspects, followed by a description of the sample preparation methods. In each chapter, an overview of the particular method is accompanied by a discussion of the relevant physical or chemical properties of the materials, including magnetic, mechanical, optical, catalytic, sensoric and other features. While some preparation methods are discussed in connection with the theories of physical electrochemistry (e.g. electrodeposition), the book also covers methods that are more heuristic but nonetheless utilize electric current (e.g. anodization of porous alumina or synthesis of carbon nanotubes by means of electric arc discharge).

Nanomagnetism and Spintronics
  • Language: en
  • Pages: 401

Nanomagnetism and Spintronics

Nanomagnetism and spintronics are two close subfields of nanoscience, explaining the effect of substantial magnetic properties of matter when the materials fabrication is realized at a comparable length size. Nanomagnetism deals with the magnetic phenomena specific to the structures having dimensions in the submicron range. The fact that the electronic transport properties of materials are dependent on the magnetic properties' artificial nanostructures, i.e., giant magnetoresistance (GMR) or tunneling magnetoresistance (TMR), has revolutionized spintronics science and technology. This book explains the concepts of nanomagnetism and spintronics by viewing the most recent research works from i...

Advances in Electrochemical Science and Engineering
  • Language: en
  • Pages: 439

Advances in Electrochemical Science and Engineering

This series, formerly edited by Heinz Gerischer and Charls V. Tobias, now edited by Richard C. Alkire and Dieter M. Kolb, has been warmly welcomed by scientists world-wide which is reflected in the reviews of the previous volumes: "This is an essential book for researchers in electrochemistry; it covers areas of both fundamental and practical importance, with reviews of high quality. The material is very well presented and the choice of topics reflects a balanced editorial policy that is welcomed." —The Analyst "All the contributions in this volume are well up to the standard of this excellent series and will be of great value to electrochemists.... The editors again deserve to be congratulated on this fine collection of reviews." —Journal of Electroanalytical Chemistry and Interfacial Chemistry "...competently and clearly written." —Berichte der Bunsen- Gesellschaft für Physikalische Chemie

Electrochemistry of Silicon and Its Oxide
  • Language: en
  • Pages: 525

Electrochemistry of Silicon and Its Oxide

It may be argued that silicon, carbon, hydrogen, oxygen, and iron are among the most important elements on our planet, because of their involvement in geological, biol- ical, and technological processes and phenomena. All of these elements have been studied exhaustively, and voluminous material is available on their properties. Included in this material are numerous accounts of their electrochemical properties, ranging from reviews to extensive monographs to encyclopedic discourses. This is certainly true for C, H, O, and Fe, but it is true to a much lesser extent for Si, except for the specific topic of semiconductor electrochemistry. Indeed, given the importance of the elect- chemical proc...

Nanostructured Semiconductors
  • Language: en
  • Pages: 694

Nanostructured Semiconductors

  • Type: Book
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  • Published: 2014-03-11
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  • Publisher: CRC Press

This book focuses on nanostructured semiconductors, their fabrication, and their application in various fields such as optics, acoustics, and biomedicine. It presents a compendium of recent developments in nanostructured and hybrid materials and also contains a collection of principles and approaches related to nano-size semiconductors. The text su

Non-Crystalline Films for Device Structures
  • Language: en
  • Pages: 279

Non-Crystalline Films for Device Structures

  • Type: Book
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  • Published: 2001-12-11
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  • Publisher: Elsevier

Physics of Thin Films is one of the longest running continuing series in thin film science, consisting of 25 volumes since 1963. The series contains quality studies of the properties of various thin films materials and systems. In order to be able to reflect the development of today's science and to cover all modern aspects of thin films, the series, starting with Volume 20, has moved beyond the basic physics of thin films. It now addresses the most important aspects of both inorganic and organic thin films, in both their theoretical and their technological aspects. Volume 29 consists of chapters pulled from Hari Singh Nalwa's forthcoming Handbook of Thin Film Materials (ISBN: 0-12-512908-4). The chapters were selected because they deal exclusively with amorphous film structures and because they have a common relevance to semiconductor, or electronic, devices and circuits. These are subjects not yet stressed in the Thin Films series.

Processes at the Semiconductor-Solution Interface 4
  • Language: en
  • Pages: 236

Processes at the Semiconductor-Solution Interface 4

The symposium consisted of four half-day sessions on topics at the forefront of semiconductor electrochemistry and solution-based processing including etching, patterning, passivation, porosity formation, electrochemical film growth, energy conversion materials, deposition, semiconductor surface functionalization, photoelectrochemical and optical properties, and other related processes. This issue of ECS Transactions contains 18 of the papers presented including invited papers by H. Föll (Christian-Albrechts University Kiel), J. N. Chazalviel (Ecole Polytechnique, CNRS), D. N. Buckley (University of Limerick, and Past President, ECS), J. D. Holmes (University College Cork), E. Chassaing (IRDEP, EDF-CNRS-ENSCP).