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Macromolecular Physics V2
Macromolecular Physics, Volume 2: Crystal Nucleation, Growth, Annealing continues the discussion of crystals of linear macromolecules. The text also gives conclusion about the description and formation of crystals. The book covers topics such as the primary, secondary, and tertiary nucleation of crystals; the general growth of crystals; solution and melt crystallization of macromolecules; and the general annealing of crystals. For those who wish to do further reading, the table of contents of Volume 1 is included in the book. The text is recommended for macromolecular physicists, especially those whose focus is on the study of crystals and its different properties.
The Influence of Annealing on Thin Films of Beta SiC
Thin films of beta silicon carbide were prepared on alpha silicon carbide substrates by the chemical vapor deposition (CVD) technique involving the hydrogen reduction of silane and propane. The films were prepared under a variety of conditions and subsequently subjected to thermal annealing cycles between 1600 degrees C and 2000 degrees C. It is shown that the single crystallinity of the beta films improved with continued annealing. The beta polytype was found to be stable over the entire range of temperatures studied.
Crystallization
Crystallization is one of the most ancient and interdisciplinary topics of research known to mankind. Crystals can be organic or inorganic and may be produced from melts, liquid solutions, vapors or even in solid state. Notwithstanding its inherently high complexity, the crystallization process is part of our everyday lives, from ice making in our homes to the most state-of-the-art chemical and electronic industry. In this book, our purpose was to present new insights to the reader, as well as crucial and very useful information for researchers working in this field, while simultaneously creating a comprehensive text about crystallization processes which may serve as a starting point for people with different backgrounds.
Plasticity of Crystals
Translation of Kristallplastizit'at, mit besonderer Ber'uchsichtigung der Metalle.
An Automatic Electric Annealing Furnace
A novel technique for annealing corundum crystals consists in rapidly cooling the crystals to room temperature after growth is complete, transferring them to an automatically programmed electric furnace and reheating them to 1980 deg. C, and then cooling them at the same rate as they were brought up to the annealing temperature. The total cycle is 32 hr. Results are consistently reproducible. (Author).
Crystal Growth
In this book, a variety of topics related to crystal growth is extensively discussed. The topics encompass the physics of growing single crystals of different functional materials, single-crystalline thin films, and even the features of crystallization of biofats and oils. It is intended to provide information on advancements in technologies for crystal growth to physicists, researches, as well as engineers working with single-crystalline functional materials.
Charge-state Effects on Annealing of Electron-irradiated Silicon
Radiation-induced defects can alter the properties of silicon and thereby degrade the performance of devices used in electronic and optoelectronic subsystems that must operate in nuclear and space radiation environments. The factors that produce or affect the stability of these defects are important considerations in developing methods for hardening devices to nuclear radiation. The annealing behavior of the E center, a prominent defect in electron-irradiated float-zone phosphorous-doped silicon, can be monitored by capacitance measurement techniques used with silicon Schottky barrier diodes. The defect charge state can be controlled during annealing by applying a reverse bias. It has been shown that although the E center is more stable in the negative charge state, it anneals more readily in the neutral charge state. It has been found that the capacitance measurement technique provides details of the properties of discrete radiation-induced defects not possible to obtain through the more conventional measurements of the Hall effect, conductivity, and carrier lifetime. (Author).
Recrystallization and Related Annealing Phenomena
Recrystallization and Related Annealing Phenomena, Third Edition, fulfills the information needs of materials scientists in both industry and academia. The subjects treated in the book are all active research areas, forming a major part of at least four regular international conference series. This new third edition ensures the reader has access to the latest findings, and is essential reading to those working in the forefront of research in universities and laboratories. For those in industry, the book highlights applications of the research and technology, exploring, in particular, the significant progress made recently in key areas such as deformed state, including deformation to very lar...
