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Advanced Gate Stack, Source/drain, and Channel Engineering for Si-based CMOS 2
These proceedings describe processing, materials, and equipment for CMOS front-end integration including gate stack, source/drain and channel engineering. Topics: strained Si/SiGe and Si/SiGe on insulator; high-mobility channels including III-V¿s, etc.; nanowires and carbon nanotubes; high-k dielectrics, metal and FUSI gate electrodes; doping/annealing for ultra-shallow junctions; low-resistivity contacts; advanced deposition (e.g. ALD, CVD, MBE), RTP, UV, plasma and laser-assisted processes.
Casebook of Organizational Behavior
Casebook of Organizational Behavior provides a panorama of absorbing, appropriately complex, modern cases from a diversity of work and organizations. The cases chosen are designed to illustrate a wide range of organizational behavior concepts and principles, those ordinarily described and discussed in any comprehensive textbook in organizational behavior. This book is organized into five parts encompassing 44 chapters. It rests upon a foundation of cases about human behavior in organizations drawn from a wide variety of settings. Cases in each chapter are chosen to illustrate concepts that fall under the particular chapter heading, but the classification is not rigid. Each case is accompanie...
Bias Temperature Instability for Devices and Circuits
This book provides a single-source reference to one of the more challenging reliability issues plaguing modern semiconductor technologies, negative bias temperature instability. Readers will benefit from state-of-the art coverage of research in topics such as time dependent defect spectroscopy, anomalous defect behavior, stochastic modeling with additional metastable states, multiphonon theory, compact modeling with RC ladders and implications on device reliability and lifetime.
RF and Time-domain Techniques for Evaluating Novel Semiconductor Transistors
This book presents a variety of techniques using high-frequency (RF) and time-domain measurements to understand the electrical performance of novel, modern transistors made of materials such as graphene, carbon nanotubes, and silicon-on-insulator, and using new transistor structures. The author explains how to use conventional RF and time- domain measurements to characterize the performance of the transistors. In addition, he explains how novel transistors may be subject to effects such as self-heating, period-dependent output, non-linearity, susceptibility to short-term degradation, DC-invisible structural defects, and a different response to DC and transient inputs. Readers will understand that in order to fully understand and characterize the behavior of a novel transistor, there is an arsenal of dynamic techniques available. In addition to abstract concepts, the reader will learn of practical tips required to achieve meaningful measurements, and will understand the relationship between these measurements and traditional, conventional DC characteristics.
Handbook of Thin Film Deposition
Handbook of Thin Film Deposition, Fifth Edition, is a comprehensive reference focusing on thin film technologies and applications used in the semiconductor industry. When pursuing patents, there is a phase called 'reduction to practice' where the idea for a technology transitions from a concept to actual use. The section 'Thin Film Reduction to Practice' includes chapters that review the most relevant methods to fabricate thin films towards practical applications. Then, the latest applications of thin film deposition technologies are discussed. Handbook of Thin Film Deposition, 5th Edition is suitable for materials scientists and engineers in academia and working in semiconductor R&D. - Offers a practical survey of thin film technologies including design, fabrication, and reliability - Covers core processes and applications in the semiconductor industry and discusses latest advances in new thin film development - Features new chapters that review methods on front-end and back-end thin films
Space Biology and Medicine: Humans in spaceflight (bks. 1 & 2)
Nicogossian, Arnauld E., Investigator, NASA Center: HQS.
