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Advanced Device Modeling and Simulation
Microelectronics is one of the most rapidly changing scientific fields today. The tendency to shrink devices as far as possible results in extremely small devices which can no longer be described using simple analytical models. This book covers various aspects of advanced device modeling and simulation. As such it presents extensive reviews and original research by outstanding scientists. The bulk of the book is concerned with the theory of classical and quantum-mechanical transport modeling, based on macroscopic, spherical harmonics and Monte Carlo methods.
Basic Semiconductor Physics
This textbook presents a detailed description of basic semiconductor physics, covering a wide range of important phenomena in semiconductors, from simple to advanced. It introduces and explains four different methods of energy band calculations in the full band region and covers fundamental topics such as the effective mass approximation and electron motion in a periodic potential, the Boltzmann transport equation, and deformation potentials used for the analysis of transport properties. The text also examines experimental and theoretical analyses of cyclotron resonance in detail and reviews essential optical and transport properties, while covering optical transitions, electron–phonon int...
Advances In Numerical Methods And Applications - Proceedings Of The Third International Conference
The topics in this volume range from basic research in numerical methods to applications in physics, mechanics, engineering, environmental science and other areas. These include: numerical methods (finite difference, finite element and boundary element methods; numerical methods of approximation theory; Monte-Carlo methods; preconditioning methods); parallel algorithms; applications of numerical methods.
Hierarchical Device Simulation
This monograph is the first on physics-based simulations of novel strained Si and SiGe devices. It provides an in-depth description of the full-band monte-carlo method for SiGe and discusses the common theoretical background of the drift-diffusion, hydrodynamic and Monte-Carlo models and their synergy.
Ultrashort Processes in Condensed Matter
The Advanced Study Institute (AS!) considered a number offacets of the very rapidly advancing field of theoretical and experimental aspects of ultrashort processes in condensed matter. Common threads exist between a series of example cases. One major subgroup of topics involves the ultrashort dynamics of excitations of various "particles" produced through the interactions of condensed matter with ultrashort duration laser light. Examples ofthe excitations include electronic and hole carriers, electron-hole plasma, phonons, vibrons and rotons, two phonon states, and excitons. Experimentation on the dynamics of such excitations, are carried out in the bulk, at surfaces, in thin films, and in q...
Physics of Semiconductor Devices
This textbook describes the basic physics of semiconductors, including the hierarchy of transport models, and connects the theory with the functioning of actual semiconductor devices. Details are worked out carefully and derived from the basic physical concepts, while keeping the internal coherence of the analysis and explaining the different levels of approximation. Coverage includes the main steps used in the fabrication process of integrated circuits: diffusion, thermal oxidation, epitaxy, and ion implantation. Examples are based on silicon due to its industrial importance. Several chapters are included that provide the reader with the quantum-mechanical concepts necessary for understandi...
Semiconductors Probed by Ultrafast Laser Spectroscopy Pt I
Semiconductors Probed by Ultrafast Laser Spectroscopy, Volume 1 discusses the use of ultrafast laser spectroscopy in studying fast physics in semiconductors. It reviews progress on the experimental and theoretical understanding of ultrafast events that occur on a picosecond and nanosecond time scale. This volume first explores the relaxation of energy and the momentum of hot carriers and then turns to relaxation of plasmas and phonons. It also discusses the dynamics of excitons, polaritons, and excitonic molecules and reviews transient transport and diffusion of carriers. Scientists, engineers, and graduate students will find this book invaluable.
The Thermoballistic Transport Model
The book presents a comprehensive survey of the thermoballistic approach to charge carrier transport in semiconductors. This semi-classical approach, which the authors have developed over the past decade, bridges the gap between the opposing drift-diffusion and ballistic models of carrier transport. While incorporating basic features of the latter two models, the physical concept underlying the thermoballistic approach constitutes a novel, unifying scheme. It is based on the introduction of "ballistic configurations" arising from a random partitioning of the length of a semiconducting sample into ballistic transport intervals. Stochastic averaging of the ballistic carrier currents over the ballistic configurations results in a position-dependent thermoballistic current, which is the key element of the thermoballistic concept and forms the point of departure for the calculation of all relevant transport properties. In the book, the thermoballistic concept and its implementation are developed in great detail and specific examples of interest to current research in semiconductor physics and spintronics are worked out.
Hot-Electron Transport in Semiconductors
Hot-Electron Transport in Semiconductors (Topics in Applied Physics).
Advanced Physical Models for Silicon Device Simulation
From the reviews: "... this is a well produced book, written in a easy to read style, and will also be a very useful primer for someone starting out the field [...], and a useful source of reference for experienced users ..." Microelectronics Journal
