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Simulation of Semiconductor Processes and Devices 2001
This volume contains the Proceedings of the International Conference on Simulation of Semiconductor Devices and Processes, SISPAD 01, held on September 5–7, 2001, in Athens. The conference provided an open forum for the presentation of the latest results and trends in process and device simulation. The trend towards shrinking device dimensions and increasing complexity in process technology demands the continuous development of advanced models describing basic physical phenomena involved. New simulation tools are developed to complete the hierarchy in the Technology Computer Aided Design simulation chain between microscopic and macroscopic approaches. The conference program featured 8 invited papers, 60 papers for oral presentation and 34 papers for poster presentation, selected from a total of 165 abstracts from 30 countries around the world. These papers disclose new and interesting concepts for simulating processes and devices.
Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices
An extrapolation of ULSI scaling trends indicates that minimum feature sizes below 0.1 mu and gate thicknesses of Audience: Both expert scientists and engineers who wish to keep up with cutting edge research, and new students who wish to learn more about the exciting basic research issues relevant to next-generation device technology.
Simulation of Semiconductor Processes and Devices 2004
This volume contains the proceedings of the 10th edition of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2004), held in Munich, Germany, on September 2-4, 2004. The conference program included 7 invited plenary lectures and 82 contributed papers for oral or poster presentation, which were carefully selected out of a total of 151 abstracts submitted from 14 countries around the world. Like the previous meetings, SISPAD 2004 provided a world-wide forum for the presentation and discussion of recent advances and developments in the theoretical description, physical modeling and numerical simulation and analysis of semiconductor fabrication processes, device operation and system performance. The variety of topics covered by the conference contributions reflects the physical effects and technological problems encountered in consequence of the progressively shrinking device dimensions and the ever-growing complexity in device technology.
Ranking of researchers and scientists in Greece in 2017 according to Google Scholar database
Scope: The classification of researchers and scientists in Greece in a unified list based on the citation impact and dissemination level of their scientific work according to Google Scholar database. Classification criteria: First criterion is h-index. In the case of equal h-index, the following scientometric indicators are used for the classification. The number of total citations, the i10-index, the total impact factor of scientist, the m-index or m-quotient of scientist. Information resource: The h-index, citations and i10-index derived from the public profiles of researchers in the Google Scholar database. In addition, the calculation of total impact factor and m-index of each researcher...
The Mycenaean Cemetery at Agios Vasileios, Chalandritsa, in Achaea
The Mycenaean chamber-tomb cemetery at Agios Vasileios in Achaea, was first investigated in the late 1920s, followed by small-scale research in 1961. In the years 1989–2001 further rescue excavations revealed 30 chamber tombs, some looted. Based mostly on the latest research, this study is the first major presentation of the cemetery and its finds.
Frontiers of Multifunctional Integrated Nanosystems
Proceedings of the NATO Advanced Research Workshop, Illmenau, Germany from 12 to 16 July 2003
