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Advanced Silicon Carbide Devices and Processing
  • Language: en
  • Pages: 260

Advanced Silicon Carbide Devices and Processing

Since the production of the first commercially available blue LED in the late 1980s, silicon carbide technology has grown into a billion-dollar industry world-wide in the area of solid-state lighting and power electronics. With this in mind we organized this book to bring to the attention of those well versed in SiC technology some new developments in the field with a particular emphasis on particularly promising technologies such as SiC-based solar cells and optoelectronics. We have balanced this with the more traditional subjects such as power electronics and some new developments in the improvement of the MOS system for SiC MOSFETS. Given the importance of advanced microsystems and sensors based on SiC, we also included a review on 3C-SiC for both microsystem and electronic applications.

Les Chroniques de Languedoc
  • Language: fr
  • Pages: 380

Les Chroniques de Languedoc

  • Type: Book
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  • Published: 1879
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  • Publisher: Unknown

None

Piezoelectric Sensors
  • Language: en
  • Pages: 344

Piezoelectric Sensors

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Reports and Documents
  • Language: en
  • Pages: 1866

Reports and Documents

  • Type: Book
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  • Published: Unknown
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  • Publisher: Unknown

None

Si Front End Processing - Physics and Technology II of Dopant-Defect Interactions II: Volume 610
  • Language: en
  • Pages: 448

Si Front End Processing - Physics and Technology II of Dopant-Defect Interactions II: Volume 610

  • Type: Book
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  • Published: 2001-04-09
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  • Publisher: Unknown

This proceedings of the April 2000 symposium deals with formation of electrical junctions in the front-end processing of devices for the approaching end-of-the-roadmap. The 60 papers address 2D dopant characterization, ion implantation and shallow junction technology, group III diffusion and activation, carbon diffusion and activation, group V diffusion and activation, vacancy-type defects, regrown amorphous layers, and structure and properties of point and extended defects. Topics include ultra-shallow junction formation and gate activation in deep-submicron CMOS, low energy implantation of boron with decaborane ions, modeling ramp rate effects on shallow junction formation, clustering equilibrium and deactivation kinetics in As doped silicon, and atomistic modeling of complex silicon processing scenarios. c. Book News Inc.

Journal of Nano Research Vol. 52
  • Language: en
  • Pages: 130

Journal of Nano Research Vol. 52

The 52nd volume of the "Journal of Nano Research" contains peer-reviewed papers by the results of the research from the field of synthesis and the use of various nanomaterials and nanostructures. We hope that this volume of the journal will be useful and interesting for a wide range of engineers, scientists, and students whose activity is related with the creation and using of nanomaterials and nanotechnologies in different branches of human activity.

Nobiliaire universel de France
  • Language: fr
  • Pages: 582

Nobiliaire universel de France

  • Type: Book
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  • Published: 1815
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  • Publisher: Unknown

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La famille de Barrel et la présentation à Castres, 1760-1802
  • Language: fr
  • Pages: 282

La famille de Barrel et la présentation à Castres, 1760-1802

  • Type: Book
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  • Published: 1877
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  • Publisher: Unknown

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