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Metrology and Diagnostic Techniques for Nanoelectronics
Nanoelectronics is changing the way the world communicates, and is transforming our daily lives. Continuing Moore’s law and miniaturization of low-power semiconductor chips with ever-increasing functionality have been relentlessly driving R&D of new devices, materials, and process capabilities to meet performance, power, and cost requirements. This book covers up-to-date advances in research and industry practices in nanometrology, critical for continuing technology scaling and product innovation. It holistically approaches the subject matter and addresses emerging and important topics in semiconductor R&D and manufacturing. It is a complete guide for metrology and diagnostic techniques essential for process technology, electronics packaging, and product development and debugging—a unique approach compared to other books. The authors are from academia, government labs, and industry and have vast experience and expertise in the topics presented. The book is intended for all those involved in IC manufacturing and nanoelectronics and for those studying nanoelectronics process and assembly technologies or working in device testing, characterization, and diagnostic techniques.
Narrow-Gap Semiconductors and Related Materials, Proceedings of the INT Conference on Narrow-Gap Semiconductors and Related Materials, NIST, Gaithersburg, June 12-15, 1989
The special characteristics of narrow-gap semiconductors have long been recognised, not only for their interesting physical effects, but also for their technological applications. Such materials are found across a wide range of elements, compounds and alloys. The International Conference on Narrow-gap Semiconductors and Materials (NIST, Gaithersburg) reviewed past research into the physics of both materials and devices, and summarised the present position, in the light of recent rapid developments in the semiconductor field. This major conference, the first of its kind since 1981, drew together 158 delegates from 14 countries. Invited reviews and invited and contributed papers covered III-VI, III-V and IV-VI compounds and various alloys. Topics considered ranged from the characterisation of artifically structured materials to the physics of infrared detector devices, as well as a review of high-Tc superconductors for infrared detection; this diversity is reflected in the reviews and papers presented here. This book will be of value to all scientists and engineers interested in narrow-gap semiconductors and needing to keep up to date with the rapid advances in this area.
Semiconductor Characterization
Market: Those in government, industry, and academia interested in state-of-the-art knowledge on semiconductor characterization for research, development, and manufacturing. Based on papers given at an International Nist Workshop in January 1995, Semiconductor Characterization covers the unique characterization requirements of both silicon IC development and manufacturing, and compound semiconductor materials, devices, and manufacturing. Additional sections discuss technology trends and future requirements for compound semiconductor applications. Also highlighted are recent developments in characterization, including in- situ, in-FAB, and off-line analysis methods. The book provides a concise, effective portrayal of industry needs and problems in the important specialty of metrology for semiconductor technology.
Eeel Technical Accomplishments, 1998
The Electronics and Electrical Engineering Laboratory (EEEL), working in concert with other NIST Laboratories, is providing measurement and other generic technology critical to the competitiveness of the U.S. electronics industry and the U.S. electricity-equipment industry. This report summarizes selected technical accomplishments and describes activities conducted by the Lab in FY 1998. Also included are profiles of EEEL's organization, customer interactions, and long-term goals. Appendix includes crosswalk of EEEL programs and projects; EEEL FY1998 resources; EEEL FY1998 CRADAS; and EEEL organization chart.
Characterization and Metrology for ULSI Technology 2005
The worldwide semiconductor community faces increasingly difficult challenges in the era of silicon nanotechnology and beyond. The magnitude of these challenges demands special attention from the metrology and analytical measurements community. New paradigms must be found. Adequate research and development for new metrology concepts are urgently needed. Characterization and metrology are key enablers for developing new semiconductor technology and in improving manufacturing. This book summarizes major issues and gives critical reviews of important measurement techniques that are crucial to continuing the advances in semiconductor technology. It covers major aspects of process technology and most characterization techniques for silicon research, including development, manufacturing, and diagnostics. The book also covers emerging nano-devices and the corresponding metrology challenges that arise.
The Spectroscopy of Semiconductors
Spectroscopic techniques are among the most powerful characterization methods used to study semiconductors. This volume presents reviews of a number of major spectroscopic techniques used to investigate bulk and artificially structured semiconductors including: photoluminescence, photo-reflectance, inelastic light scattering, magneto-optics, ultrafast work, piezo-spectroscopy methods, and spectroscopy at extremely low temperatures and high magnetic fields. Emphasis is given to major semiconductor systems, and artificially structured materials such as GaAs, InSb, Hg1-xCdxTe and MBE grown structures based upon GaAs/AlGaAs materials. Both the spectroscopic novice and the expert will benefit from the descriptions and discussions of the methods, principles, and applications relevant to today's semiconductor structures. Key Features * Discusses the latest advances in spectroscopic techniques used to investigate bulk and artificially structured semiconductors * Features detailed review articles which cover basic principles * Highlights specific applications such as the use of laser spectroscopy for the characterization of GaAs quantum well structures.
Advancing Metrology for Electrotechnology to Support the U.S. Economy
Presents an overview of work completed in 1997 in the Electronics & Electrical Engineering Laboratory (EEEL) of the National Institute of Standards & Technology. Selected technological accomplishments in the following fields are detailed: semiconductors, magnetics, superconductors, low frequency, microwaves, lightwaves, video, power, electromagnetic compatibility, electronic data exchange, & national electrical standards. Includes a profile of EEEL & its programs, projects, executive structure, awards & recognition, & management staff. Photographs, graphs & diagrams.
