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SiGe--materials, Processing, and Devices
  • Language: en
  • Pages: 1242

SiGe--materials, Processing, and Devices

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SiGe and Ge
  • Language: en
  • Pages: 1280

SiGe and Ge

The second International SiGe & Ge: Materials, Processing, and Devices Symposium was part of the 2006 ECS conference held in Cancun, Mexico from October 29-Nov 3, 2006. This meeting provided a forum for reviewing and discussing all materials and device related aspects of SiGe & Ge. The hardcover edition includes a bonus CD-ROM containing the PDF of the entire issue.

Official Gazette of the United States Patent and Trademark Office
  • Language: en
  • Pages: 1124

Official Gazette of the United States Patent and Trademark Office

  • Type: Book
  • -
  • Published: 1999
  • -
  • Publisher: Unknown

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Official Gazette of the United States Patent and Trademark Office
  • Language: en
  • Pages: 1404

Official Gazette of the United States Patent and Trademark Office

  • Type: Book
  • -
  • Published: 2002
  • -
  • Publisher: Unknown

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SiGe, Ge, and Related Compounds 3: Materials, Processing, and Devices
  • Language: en
  • Pages: 1136

SiGe, Ge, and Related Compounds 3: Materials, Processing, and Devices

Advanced semiconductor technology is depending on innovation and less on "classical" scaling. SiGe, Ge, and Related Compounds have become a key component of the arsenal in improving semiconductor performance. This issue of ECS Transactions discusses the technology to form these materials, process them, FET devices incorporating them, Surfaces and Interfaces, Optoelectronic devices, and HBT devices.

SiGe, Ge and Related Compounds 6
  • Language: en
  • Pages: 1014

SiGe, Ge and Related Compounds 6

  • Type: Book
  • -
  • Published: 2014
  • -
  • Publisher: Unknown

None

SiGe, Ge, and Related Compounds 4: Materials, Processing, and Devices
  • Language: en
  • Pages: 1066

SiGe, Ge, and Related Compounds 4: Materials, Processing, and Devices

Advanced semiconductor technology is depending on innovation and less on "classical" scaling. SiGe, Ge, and Related Compounds has become a key component in the arsenal in improving semiconductor performance. This symposium discusses the technology to form these materials, process them, FET devices incorporating them, Surfaces and Interfaces, Optoelectronic devices, and HBT devices.

Annual Commencement
  • Language: en
  • Pages: 415

Annual Commencement

  • Type: Book
  • -
  • Published: 1983
  • -
  • Publisher: Unknown

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Silicon Germanium
  • Language: en
  • Pages: 368

Silicon Germanium

"An excellent introduction to the SiGe BiCMOS technology, from the underlying device physics to current applications." -Ron Wilson, EETimes "SiGe technology has demonstrated the ability to provide excellent high-performance characteristics with very low noise, at high power gain, and with excellent linearity. This book is a comprehensive review of the technology and of the design methods that go with it." -Alberto Sangiovanni-Vincentelli Professor, University of California, Berkeley Cofounder, Chief Technology Officer, Member of Board Cadence Design Systems Inc. Filled with in-depth insights and expert advice, Silicon Germanium covers all the key aspects of this technology and its applicatio...