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Gallium Nitride-enabled High Frequency and High Efficiency Power Conversion
  • Language: en
  • Pages: 232

Gallium Nitride-enabled High Frequency and High Efficiency Power Conversion

  • Type: Book
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  • Published: 2018-05-12
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  • Publisher: Springer

This book demonstrates to readers why Gallium Nitride (GaN) transistors have a superior performance as compared to the already mature Silicon technology. The new GaN-based transistors here described enable both high frequency and high efficiency power conversion, leading to smaller and more efficient power systems. Coverage includes i) GaN substrates and device physics; ii) innovative GaN -transistors structure (lateral and vertical); iii) reliability and robustness of GaN-power transistors; iv) impact of parasitic on GaN based power conversion, v) new power converter architectures and vi) GaN in switched mode power conversion. Provides single-source reference to Gallium Nitride (GaN)-based technologies, from the material level to circuit level, both for power conversions architectures and switched mode power amplifiers; Demonstrates how GaN is a superior technology for switching devices, enabling both high frequency, high efficiency and lower cost power conversion; Enables design of smaller, cheaper and more efficient power supplies.

Springer Handbook of Semiconductor Devices
  • Language: en
  • Pages: 1680

Springer Handbook of Semiconductor Devices

This Springer Handbook comprehensively covers the topic of semiconductor devices, embracing all aspects from theoretical background to fabrication, modeling, and applications. Nearly 100 leading scientists from industry and academia were selected to write the handbook's chapters, which were conceived for professionals and practitioners, material scientists, physicists and electrical engineers working at universities, industrial R&D, and manufacturers. Starting from the description of the relevant technological aspects and fabrication steps, the handbook proceeds with a section fully devoted to the main conventional semiconductor devices like, e.g., bipolar transistors and MOS capacitors and ...

Power GaN Devices
  • Language: en
  • Pages: 380

Power GaN Devices

  • Type: Book
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  • Published: 2016-09-08
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  • Publisher: Springer

This book presents the first comprehensive overview of the properties and fabrication methods of GaN-based power transistors, with contributions from the most active research groups in the field. It describes how gallium nitride has emerged as an excellent material for the fabrication of power transistors; thanks to the high energy gap, high breakdown field, and saturation velocity of GaN, these devices can reach breakdown voltages beyond the kV range, and very high switching frequencies, thus being suitable for application in power conversion systems. Based on GaN, switching-mode power converters with efficiency in excess of 99 % have been already demonstrated, thus clearing the way for mas...

Solid State Lighting Reliability Part 2
  • Language: en
  • Pages: 606

Solid State Lighting Reliability Part 2

  • Type: Book
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  • Published: 2017-07-11
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  • Publisher: Springer

In the past four years we have witnessed rapid development in technology and significant market penetration in many applications for LED systems. New processes and new materials have been introduced; new standards and new testing methods have been developed; new driver, control and sensing technologies have been integrated; and new and unknown failure modes have also been presented. In this book, Solid State Lighting Reliability Part 2, we invited the experts from industry and academia to present the latest developments and findings in the LED system reliability arena. Topics in this book cover the early failures and critical steps in LED manufacturing; advances in reliability testing and st...

III-Nitride Based Light Emitting Diodes and Applications
  • Language: en
  • Pages: 495

III-Nitride Based Light Emitting Diodes and Applications

  • Type: Book
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  • Published: 2017-05-18
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  • Publisher: Springer

The revised edition of this important book presents updated and expanded coverage of light emitting diodes (LEDs) based on heteroepitaxial GaN on Si substrates, and includes new chapters on tunnel junction LEDs, green/yellow LEDs, and ultraviolet LEDs. Over the last two decades, significant progress has been made in the growth, doping and processing technologies of III-nitride based semiconductors, leading to considerable expectations for nitride semiconductors across a wide range of applications. LEDs are already used in traffic signals, signage lighting, and automotive applications, with the ultimate goal of the global replacement of traditional incandescent and fluorescent lamps, thus red...

Wide Bandgap Based Devices
  • Language: en
  • Pages: 242

Wide Bandgap Based Devices

  • Type: Book
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  • Published: 2021-05-26
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  • Publisher: MDPI

Emerging wide bandgap (WBG) semiconductors hold the potential to advance the global industry in the same way that, more than 50 years ago, the invention of the silicon (Si) chip enabled the modern computer era. SiC- and GaN-based devices are starting to become more commercially available. Smaller, faster, and more efficient than their counterpart Si-based components, these WBG devices also offer greater expected reliability in tougher operating conditions. Furthermore, in this frame, a new class of microelectronic-grade semiconducting materials that have an even larger bandgap than the previously established wide bandgap semiconductors, such as GaN and SiC, have been created, and are thus re...

Light-Emitting Diodes
  • Language: en
  • Pages: 601

Light-Emitting Diodes

  • Type: Book
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  • Published: 2019-01-07
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  • Publisher: Springer

Comprehensive in scope, this book covers the latest progresses of theories, technologies and applications of LEDs based on III-V semiconductor materials, such as basic material physics, key device issues (homoepitaxy and heteroepitaxy of the materials on different substrates, quantum efficiency and novel structures, and more), packaging, and system integration. The authors describe the latest developments of LEDs with spectra coverage from ultra-violet (UV) to the entire visible light wavelength. The major aspects of LEDs, such as material growth, chip structure, packaging, and reliability are covered, as well as emerging and novel applications beyond the general and conventional lightings. ...

Gallium Nitride and Silicon Carbide Power Technologies
  • Language: en
  • Pages: 361
Flash Memories
  • Language: en
  • Pages: 544

Flash Memories

A Flash memory is a Non Volatile Memory (NVM) whose "unit cells" are fabricated in CMOS technology and programmed and erased electrically. In 1971, Frohman-Bentchkowsky developed a folating polysilicon gate tran sistor [1, 2], in which hot electrons were injected in the floating gate and removed by either Ultra-Violet (UV) internal photoemission or by Fowler Nordheim tunneling. This is the "unit cell" of EPROM (Electrically Pro grammable Read Only Memory), which, consisting of a single transistor, can be very densely integrated. EPROM memories are electrically programmed and erased by UV exposure for 20-30 mins. In the late 1970s, there have been many efforts to develop an electrically erasa...

Computer, Network, Software, and Hardware Engineering with Applications
  • Language: en
  • Pages: 608

Computer, Network, Software, and Hardware Engineering with Applications

There are many books on computers, networks, and software engineering but none that integrate the three with applications. Integration is important because, increasingly, software dominates the performance, reliability, maintainability, and availability of complex computer and systems. Books on software engineering typically portray software as if it exists in a vacuum with no relationship to the wider system. This is wrong because a system is more than software. It is comprised of people, organizations, processes, hardware, and software. All of these components must be considered in an integrative fashion when designing systems. On the other hand, books on computers and networks do not demo...