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Nitride Semiconductor Technology
The book "Nitride Semiconductor Technology" provides an overview of nitride semiconductors and their uses in optoelectronics and power electronics devices. It explains the physical properties of those materials as well as their growth methods. Their applications in high electron mobility transistors, vertical power devices, LEDs, laser diodes, and vertical-cavity surface-emitting lasers are discussed in detail. The book further examines reliability issues in these materials and puts forward perspectives of integrating them with 2D materials for novel high-frequency and high-power devices. In summary, it covers nitride semiconductor technology from materials to devices and provides the basis for further research.
Silicon Carbide and Related Materials 2015
This volume collects the papers from the 16th International Conference on Silicon Carbide and Related Materials (ICSCRM 2015), held in Giardini Naxos, Italy, in October 2015. During the conference, the researchers discussed issues in the field of wide bandgap semiconductors, focusing on silicon carbide, but also III-nitrides, and related materials like graphene. The major sections of the book collect papers in the area of material growth, characterization, processing, devices and related materials and technologies. The papers are grouped as follows: Chapter 1: SiC Growth Chapter 2: SiC Theory and Characterization Chapter 3: SiC Processing Chapter 4: SiC Devices
Silicon Carbide and Related Materials 2015
This volume collects the papers from the 16th International Conference on Silicon Carbide and Related Materials (ICSCRM 2015), held in Giardini Naxos, Italy, in October 2015. During the conference, the researchers discussed issues in the field of wide bandgap semiconductors, focusing on silicon carbide, but also III-nitrides, and related materials like graphene.The major sections of the book collect papers in the area of material growth, characterization, processing, devices and related materials and technologies.The papers are grouped as follows:Chapter 1: SiC GrowthChapter 2: SiC Theory and CharacterizationChapter 3: SiC ProcessingChapter 4: SiC DevicesChapter 5: Related Materials Silicon Carbide, Wide Bandgap Semiconductor, Bulk Growth of SIC, Epitaxial Growth of SIC, Processing of SIC, SIC Devices, Power Electronics, MOS, Characterization, Graphene, III-Nitrides Materials Science.
Springer Handbook of Semiconductor Devices
This Springer Handbook comprehensively covers the topic of semiconductor devices, embracing all aspects from theoretical background to fabrication, modeling, and applications. Nearly 100 leading scientists from industry and academia were selected to write the handbook's chapters, which were conceived for professionals and practitioners, material scientists, physicists and electrical engineers working at universities, industrial R&D, and manufacturers. Starting from the description of the relevant technological aspects and fabrication steps, the handbook proceeds with a section fully devoted to the main conventional semiconductor devices like, e.g., bipolar transistors and MOS capacitors and ...
Wide Bandgap Semiconductors for Power Electronics
Wide Bandgap Semiconductors for Power Electronic A guide to the field of wide bandgap semiconductor technology Wide Bandgap Semiconductors for Power Electronics is a comprehensive and authoritative guide to wide bandgap materials silicon carbide, gallium nitride, diamond and gallium(III) oxide. With contributions from an international panel of experts, the book offers detailed coverage of the growth of these materials, their characterization, and how they are used in a variety of power electronics devices such as transistors and diodes and in the areas of quantum information and hybrid electric vehicles. The book is filled with the most recent developments in the burgeoning field of wide ban...
Toward Functional Nanomaterials
This book presents a detailed overview of recent research developments on functional nanomaterials, including synthesis, characterization, and applications. This state-of-the-art book is multidisciplinary in scope and international in authorship.
Electrical Atomic Force Microscopy for Nanoelectronics
The tremendous impact of electronic devices on our lives is the result of continuous improvements of the billions of nanoelectronic components inside integrated circuits (ICs). However, ultra-scaled semiconductor devices require nanometer control of the many parameters essential for their fabrication. Through the years, this created a strong alliance between microscopy techniques and IC manufacturing. This book reviews the latest progress in IC devices, with emphasis on the impact of electrical atomic force microscopy (AFM) techniques for their development. The operation principles of many techniques are introduced, and the associated metrology challenges described. Blending the expertise of industrial specialists and academic researchers, the chapters are dedicated to various AFM methods and their impact on the development of emerging nanoelectronic devices. The goal is to introduce the major electrical AFM methods, following the journey that has seen our lives changed by the advent of ubiquitous nanoelectronics devices, and has extended our capability to sense matter on a scale previously inaccessible.
Conductive Atomic Force Microscopy
The first book to summarize the applications of CAFM as the most important method in the study of electronic properties of materials and devices at the nanoscale. To provide a global perspective, the chapters are written by leading researchers and application scientists from all over the world and cover novel strategies, configurations and setups where new information will be obtained with the help of CAFM. With its substantial content and logical structure, this is a valuable reference for researchers working with CAFM or planning to use it in their own fields of research.
Advancing Silicon Carbide Electronics Technology I
The rapidly advancing Silicon Carbide technology has a great potential in high temperature and high frequency electronics. High thermal stability and outstanding chemical inertness make SiC an excellent material for high-power, low-loss semiconductor devices. The present volume presents the state of the art of SiC device fabrication and characterization. Topics covered include: SiC surface cleaning and etching techniques; electrical characterization methods and processing of ohmic contacts to silicon carbide; analysis of contact resistivity dependence on material properties; limitations and accuracy of contact resistivity measurements; ohmic contact fabrication and test structure design; ove...
