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Updating its bestselling predecessor, Ferroelectric Devices, Second Edition assesses the last decade of developments—and setbacks—in the commercialization of ferroelectricity. Field pioneer and esteemed author Uchino provides insight into why this relatively nascent and interdisciplinary process has failed so far without a systematic accumulation of fundamental knowledge regarding materials and device development. Filling the informational void, this collection of information reviews state-of-the-art research and development trends reflecting nano and optical technologies, environmental regulation, and alternative energy sources. Like the first edition, which became a standard in the fie...
Reconfigurable RF-frontends aim to cope with the continuous pursuit of wider frequency coverage, higher efficiency, further compactness and lower cost of ownership. They are expected to lay the foundations of future software defined or cognitive radios. As a potential enabling technology for the frontends, the tunable ferroelectric devices have shown not only enhanced performance but also new functionalities. This book explores the recent developments in the field. It provides a cross-sectional perspective on the interdisciplinary research. With attention to the devices based on ceramic thick-films and crystal thin-films, the book reviews the adapted technologies of material synthesis, film ...
Semiconductors and Semimetals series, highlights new advances in the field, with this new volume presenting interesting chapters. Each chapter is written by an international board of authors. - 2019 marks the year that nitride ferroelectrics were reported, and the indicators and mechanisms used for oxide ferroelectricity appear inadequate - The emergence of nitride ferroelectrics has opened new frontiers in ferroelectric materials research and ferroelectric based technologies. This book is a direct consequence of this - Draws upon the collective knowledge and expertise of leading scientists and researchers in this field to provide a holistic view on the state of ferroelectric nitride research and applications
The past five years have witnessed some dramatic developments in the general area of ferroelectric thin films materials and devices. Ferroelectrics are not new materials by any stretch ofimagination. Indeed, they have been known since the early partofthis century and popular ferroelectric materials such as Barium Titanate have been in use since the second world war. In the late sixties and seventies, a considerable amountofresearch and development effort was made to create a solid state nonvolatile memory using ferroelectrics in a vary simple matrix-addressed scheme. These attempts failed primarily due to problems associated with either the materials ordue to device architectures. The early ...
This book explores the applications of ferroelectric materials in information technology by developing several prototype devices based on Pb(Mg1/3Nb2/3)O3-PbTiO3 (PMN-PT) single crystals. It describes how an optothermal field-effect transistor (FET) was constructed on the PMN-26PT single crystal, using a MoS2 monolayer as the channel semiconductor material. This fusion of pyroelectric effect and the interface engineering of 2D materials provides an effective strategy for the ‘photon revolution’ of FET. An ultra-broadband photodetector (UV ~ THz) was monolithically integrated into a [111]-oriented PMN-28PT single crystal by using silver nanowires in the transparent top electrode. The phot...
Today’s wireless communications and information systems are heavily based on microwave technology. Current trends indicate that in the future along with - crowaves, the millimeter wave and Terahertz technologies will be used to meet the growing bandwidth and overall performance requirements. Moreover, motivated by the needs of the society, new industry sectors are gaining ground; such as wi- less sensor networks, safety and security systems, automotive, medical, envir- mental/food monitoring, radio tags etc. Furthermore, the progress and the pr- lems in the modern society indicate that in the future these systems have to be more user/consumer friendly, i. e. adaptable, reconfigurable and c...
Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices covers all aspects relating to the structural and electrical properties of HfO2 and its implementation into semiconductor devices, including a comparison to standard ferroelectric materials. The ferroelectric and field-induced ferroelectric properties of HfO2-based films are considered promising for various applications, including non-volatile memories, negative capacitance field-effect-transistors, energy storage, harvesting, and solid-state cooling. Fundamentals of ferroelectric and piezoelectric properties, HfO2 processes, and the impact of dopants on ferroelectric properties are also extensively discussed in the b...
Ferroelectric materials have been and still are widely used in many applications, that have moved from sonar towards breakthrough technologies such as memories or optical devices. This book is a part of a four volume collection (covering material aspects, physical effects, characterization and modeling, and applications) and focuses on the application of ferroelectric devices to innovative systems. In particular, the use of these materials as varying capacitors, gyroscope, acoustics sensors and actuators, microgenerators and memory devices will be exposed, providing an up-to-date review of recent scientific findings and recent advances in the field of ferroelectric devices.
This is the first comprehensive book on ferroelectric memories which contains chapters on device design, processing, testing, and device physics, as well as on breakdown, leakage currents, switching mechanisms, and fatigue. State-of-the-art device designs are included and illustrated among the books many figures. More than 500 up-to-date references and 76 problems make it useful as a research reference for physicists, engineers and students.
A major barrier to the introduction of ferroelectric devices into mass markets remains their limited reliability due to fatigue. The underlying physical and chemical mechanisms of this material fatigue phenomenon are extremely complex, and the relevant influences range from single-point defects to macroscopic boundary conditions. This book summarizes the different aspects of fatigue in ferroelectrics. It is primarily concerned with bulk material effects. Mechanical, electrical, and physico-chemical processes are described; reference data are given for different loading regimes and boundary conditions; and various fatigue models are compared. The monograph also demonstrates how the results of acoustic emission and of microscopy studies reveal the microscopic origins of fatigue in ferroelectric devices.