Welcome to our book review site go-pdf.online!
You may have to Search all our reviewed books and magazines, click the sign up button below to create a free account.
Preparation and Crystal Growth of Materials with Layered Structures
The goal of the series Physics and Chemistry of Materials with Layered Structures is to give a critical survey of our present knowledge on a large family of materials which can be described as solids containing molecules which in two dimensions extend to infinity and which are loosely stacked on top of each other to form three dimensional crystals. Of course, the physics and chemistry of these crystals are specific chapters in ordinary solid state science, and many a scientist hunting for new phenomena has in the past been disappointed to find that materials with layered structures are not entirely exotic. Their electron and phonon states are not two dimensional, and the high hopes held by s...
Research in Progress
None
Physics of Disordered Materials
This volume and its two companion volumes, entitled Tetrahedrally-Bonded Amorphous Semiconductors and Localization and Metal-Insulator Transitions, are our way of paying special tribute to Sir Nevill Mott and to express our heartfelt wishes to him on the occasion of his eightieth birthday. Sir Nevill has set the highest standards as a physicist, teacher, and scientific leader. Our feelings for him include not only the respect and admiration due a great scientist, but also a deep affection for a great human being, who possesses a rare combination of outstanding personal qualities. We thank him for enriching our lives, and we shall forever carry cherished memories of this noble man. Scientists...
Physical Properties of Amorphous Materials
The Institute for Amorphous Studies was founded in 1982 as the international center for the investigation of amorphous mate rials. It has since played an important role in promoting the und er standing of disordered matter in general. An Institute lecture series on "Fundamentals of Amorphous Materials and Devices" was held during 1982-83 with distinguished speakers from universities and industry. These events were free and open to the public ,and were attended by many representatives of the scientific community. The lectures themselves were highly successful inasmuch as they provided not only formal instruction but also an opportunity for vigorous and stimulating debate. That last element co...
Low-temperature Solid-state Phase Transformations in 2H Silicon Carbide
Single crystals of 2H SiC were observed to undergo phase transformations at temperatures as low as 400 C. Some 2H crystals transformed to a structure with one-dimensional disorder along the crystal c axis. Others transformed to a faulted cubic/6H structure. The transformation is time and temperature dependent and is greatly enhanced by dislocations. Observations indicate that the transformation takes place by means of a slip process perpendicular to the c axis. Cubic SiC crystals were observed to undergo a solid state transformation above 1400 C.
Science And Technology Of An American Genius, The: Stanford R Ovshinsky
This book highlights the achievements of the self-taught inventor, scientist, manufacturer and entrepreneur, Stanford R Ovshinsky. This remarkable individual could, without special training, compete with the well-funded establishments of learning and industry in the second half of the last century and leave us an incredible legacy of brilliant innovations with a lasting impact on our lives. His achievements extend over amazingly diverse fields and have or are prone to create new industries of great societal value.The phase change memories of commonly used rewritable CDs and DVDs as well as of new flash memories are his invention; so are the Ni Metal hydride batteries which are the enabling b...
Disorder and Order in the Solid State
This Festschrift is an outgrowth of a collection of papers presented as a conference in honor of Professor Heinz K. Henisch on his sixty-fifth birthday held at the Institute for Amorphous Studies. Bloomfield Hills. Michigan. It is our great pleasure to be editors of the Festschrift volume to honor Heinz and his work. Professor Henisch has a long and distinguished career and has many accomplishments in semiconductor materials and devices. He has made seminal contributions to the understanding of semiconductor switching devices and contact properties. He has an outstandin~ reputation as an expositor of science. His seminars and lectures are always deep. lucid and witty. He received his doctora...
August 1979
No detailed description available for "August 1979".
