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Handbook of Nitride Semiconductors and Devices, Materials Properties, Physics and Growth
  • Language: en
  • Pages: 1311

Handbook of Nitride Semiconductors and Devices, Materials Properties, Physics and Growth

The three volumes of this handbook treat the fundamentals, technology and nanotechnology of nitride semiconductors with an extraordinary clarity and depth. They present all the necessary basics of semiconductor and device physics and engineering together with an extensive reference section. Volume 1 deals with the properties and growth of GaN. The deposition methods considered are: hydride VPE, organometallic CVD, MBE, and liquid/high pressure growth. Additionally, extended defects and their electrical nature, point defects, and doping are reviewed.

Zinc Oxide
  • Language: en
  • Pages: 488

Zinc Oxide

This first systematic, authoritative and thorough treatment in one comprehensive volume presents the fundamentals and technologies of the topic, elucidating all aspects of ZnO materials and devices. Following an introduction, the authors look at the general properties of ZnO, as well as its growth, optical processes, doping and ZnO-based dilute magnetic semiconductors. Concluding sections treat bandgap engineering, processing and ZnO nanostructures and nanodevices. Of interest to device engineers, physicists, and semiconductor and solid state scientists in general.

Nitride Semiconductors and Devices
  • Language: en
  • Pages: 511

Nitride Semiconductors and Devices

This timely monograph addresses an important class of semiconductors and devices that constitute the underlying technology for blue lasers. It succinctly treats structural, electrical and optical properties of nitrides and the substrates on which they are deposited, band structures of nitrides, optical processes, deposition and fabrication technologies, light-emitting diodes, and lasers. It also includes many tables and figures detailing the properties and performance of nitride semiconductors and devices.

Nitride Semiconductors and Devices
  • Language: en
  • Pages: 489

Nitride Semiconductors and Devices

  • Type: Book
  • -
  • Published: 2012-02-06
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  • Publisher: Springer

This timely monograph addresses an important class of semiconductors and devices that constitute the underlying technology for blue lasers. It succinctly treats structural, electrical and optical properties of nitrides and the substrates on which they are deposited, band structures of nitrides, optical processes, deposition and fabrication technologies, light-emitting diodes, and lasers. It also includes many tables and figures detailing the properties and performance of nitride semiconductors and devices.

GaAs Devices and Circuits
  • Language: en
  • Pages: 677

GaAs Devices and Circuits

GaAs devices and integrated circuits have emerged as leading contenders for ultra-high-speed applications. This book is intended to be a reference for a rapidly growing GaAs community of researchers and graduate students. It was written over several years and parts of it were used for courses on GaAs devices and integrated circuits and on heterojunction GaAs devices developed and taught at the University of Minnesota. Many people helped me in writing this book. I would like to express my deep gratitude to Professor Lester Eastman of Cornell University, whose ideas and thoughts inspired me and helped to determine the direction of my research work for many years. I also benefited from numerous...

Mosaic
  • Language: en
  • Pages: 454

Mosaic

  • Type: Book
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  • Published: 1987
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  • Publisher: Unknown

None

Wide Bandgap Semiconductor Materials and Devices 16
  • Language: en
  • Pages: 347
Scientific and Technical Aerospace Reports
  • Language: en
  • Pages: 562

Scientific and Technical Aerospace Reports

  • Type: Book
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  • Published: 1992
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  • Publisher: Unknown

None

Picosecond Electronics and Optoelectronics
  • Language: en
  • Pages: 267

Picosecond Electronics and Optoelectronics

Over the past decade, we have witnessed a number of spectacular advances in the fabrication of crystalline semiconductor devices due mainly to the pro gress of the different techni ques of heteroepitaxy. The di scovery of two dimensional behavior of electrons led to the development of a new breed of ultrafast electronic and optical devices, such as modulation doped FETs, permeable base transistors, and double heterojunction transistors. Comparable progress has been made in the domain of cryoelectronics, ultrashort pulse generation, and ultrafast diagnostics. Dye lasers can generate 8 fs signals after compression, diode lasers can be modulated at speeds close to 20 GHz and electrical signals ...

Proceedings of the Multi-Conference 2011
  • Language: en
  • Pages: 1074

Proceedings of the Multi-Conference 2011

The International Conference on Signals, Systems and Automation (ICSSA 2011) aims to spread awareness in the research and academic community regarding cutting-edge technological advancements revolutionizing the world. The main emphasis of this conference is on dissemination of information, experience, and research results on the current topics of interest through in-depth discussions and participation of researchers from all over the world. The objective is to provide a platform to scientists, research scholars, and industrialists for interacting and exchanging ideas in a number of research areas. This will facilitate communication among researchers in different fields of Electronics and Com...