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Understanding of NiO-based Unipolar Resistive Switching from First Principle Simulations to Macroscopic Models
As NAND Flash memory technology is facing challenging issues such as electronic coupling between adjacent cells and high coupling of the control gate with floating gate in scaling down to and beyond 16nm technology node, new functional devices or materials has been explored to continue consecutive development of memory technology beyond 16nm technology node. One of the new emerging non-volatile memories is resistance change random access memory(ReRAM) possibly meeting the requirements to replace NAND Flash; i.e., low cost, simple structure, promising 8nm technology node, low power dissipation, high endurance, possible integration in crossbar arrays in 3D on top of silicon base CMOS ICs. In R...
Systems Modeling and Simulation: Theory and Applications
This book constitutes the refereed post-proceedings of the third Asian Simulation Conference, AsiaSim 2004, held in Jeju Island, Korea in October 2004. The 78 revised full papers presented together with 2 invited keynote papers were carefully reviewed and selected from 178 submissions; after the conference, the papers went through another round of revision. The papers are organized in topical sections on modeling and simulation methodology, manufacturing, aerospace simulation, military simulation, medical simulation, general applications, network simulation and modeling, e-business simulation, numerical simulation, traffic simulation, transportation, virtual reality, engineering applications, and DEVS modeling and simulation.
Worldwide Government Directory with Intergovernmental Organizations 2013
Published for more than 24 years, there is no substitute for the Worldwide Government Directory, which allows users to identify and reach 32,000 elected and appointed officials in 201 countries, plus the European Union. Extensive coverage that includes over 1,800 pages of executive, legislative and political branches; heads of state, ministers, deputies, secretaries and spokespersons as well as state agencies, diplomats and senior level defense officials. It also covers the leadership of more than 100 international organizations. World Government contact information that includes phone numbers and email. Listings include: Name, addresses, telephone and fax numbers, email and web addresses Titles Hierarchical arrangements defining state structures
Diplomatic List
Directory of foreign diplomatic officers in Washington.
JJAP
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Information Security and Cryptology - ICISC 2010
This book constitutes the thoroughly refereed post-conference proceedings of the 13th International Conference on Information Security and Cryptology, held in Seoul, Korea, in December 2010. The 28 revised full papers presented were carefully selected from 99 submissions during two rounds of reviewing. The conference provides a forum for the presentation of new results in research, development, and applications in the field of information security and cryptology. The papers are organized in topical sections on cryptanalysis, cryptographic algorithms, implementation, network and mobile security, symmetric key cryptography, cryptographic protocols, and side channel attack.
Modeling and State Estimation of Automotive Lithium-Ion Batteries
This book aims to evaluate and improve the state of charge (SOC) and state of health (SOH) of automotive lithium-ion batteries. The authors first introduce the basic working principle and dynamic test characteristics of lithium-ion batteries. They present the dynamic transfer model, compare it with the traditional second-order reserve capacity (RC) model, and demonstrate the advantages of the proposed new model. In addition, they propose the chaotic firefly optimization algorithm and demonstrate its effectiveness in improving the accuracy of SOC and SOH estimation through theoretical and experimental analysis. The book will benefit researchers and engineers in the new energy industry and provide students of science and engineering with some innovative aspects of battery modeling.
