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Silicon, the leading material in microelectronics during the last four decades, also promises to be the key material in the future. Despite many claims that silicon technology has reached fundamental limits, the performance of silicon microelectronics continues to improve steadily. The same holds for almost all the applications for which Si was considered to be unsuitable. The main exception to this positive trend is the silicon laser, which has not been demonstrated to date. The main reason for this comes from a fundamental limitation related to the indirect nature of the Si band-gap. In the recent past, many different approaches have been taken to achieve this goal: dislocated silicon, extremely pure silicon, silicon nanocrystals, porous silicon, Er doped Si-Ge, SiGe alloys and multiquantum wells, SiGe quantum dots, SiGe quantum cascade structures, shallow impurity centers in silicon and Er doped silicon. All of these are abundantly illustrated in the present book.
Provides the theoretical background needed by physicists, engineers and students to simulate nano-devices, semiconductor quantum dots and molecular devices. It presents in a unified way the theoretical concepts, the more recent semi-empirical and ab initio methods, and their application to experiments. The topics include quantum confinement, dielectric and optical properties, non-radiative processes, defects and impurities, and quantum transport. This guidebook not only provides newcomers with an accessible overview (requiring only basic knowledge of quantum mechanics and solid-state physics) but also provides active researchers with practical simulation tools.
This volume provides a comprehensive review of the experimental and theoretical aspects of the optical and transport properties of nanoporous silicon, their relation to the microscopic structure of nanocrystals, and the application of porous silicon in optical devices. As porous silicon is an ideal substance for the modelling of optical processes in nanocrystalline materials, this volume also is an excellent reference source on the more general subject of the structural and optical properties of nanocrystalline semiconductors.
The aim of this Advanced Study Institute was to give an account on the most recent results obtained in solar research. Bucharest was chosen to host it, because the capital city of Romania was located right in the middle of the totality path of the last eclipse of the millennium, on 11th August 1999; furthermore the phenomenon was close to reach there its longest duration: 2m 23s. Such a total eclipse is not only a very spectacular event which draws the crowds: to astronomers, solar eclipses still offer the best conditions for observing the lower part of the corona. The Sun plays a crucial role in our very existence. It was responsible for the formation of the Earth, and rendered this planet fit to host living beings, providing the right amount of heat, and this for a long enough span of time. Quite understandably, it has always been a prime target of human curiosity, and more recently one of scientific investigation. During the last century, it was realized that the Sun is a star like billions of others; we learned since that it draws its energy from the nuclear fusion of hydrogen, and we are now able to estimate its age and life expectancy.
This book consists of a selection of original papers of the leading scientists in the fields of Space and Planetary Physics, Solar and Space Plasma Physics with important contributions to the theory, modeling and experimental techniques of the solar wind exploration. Its purpose is to provide the means for interested readers to become familiar with the current knowledge of the solar wind formation and elemental composition, the interplanetary dynamical evolution and acceleration of the charged plasma particles, and the guiding magnetic field that connects to the magnetospheric field lines and adjusts the effects of the solar wind on Earth. I am convinced that most of the research scientists actively working in these fields will find in this book many new and interesting ideas.
About five years ago, Professor P. G. Burke asked me to edit a sequel to an earlier book-Autoionization: Theoretical, Astrophysical, and Laboratory Experimental Aspects, edited by A. Temkin, Mono Book Corp. , Baltimore, 1966. Because so much time had gone by and so much work had been done, the prospect of updating the 1966 volume seemed out of the question. In 1965 the phenomenon of autoionization, although long known, was just starting to emerge from a comparatively intuitive stage of understanding. Three major developments characterized that development: In solar (astro-)physics, Alan Burgess (1960) had provided the resolution of the discrepancy of the temperature of the solar corona as ob...
This book covers a broad spectrum of the silicon-based materials and their device applications. This book provides a broad coverage of the silicon-based materials including different kinds of silicon-related materials, their processing, spectroscopic characterization, physical properties, and device applications. This two-volume set offers a selection of timely topics on silicon materials namely those that have been extensively used for applications in electronic and photonic technologies. The extensive reference provides broad coverage of silicon-based materials, including different types of silicon-related materials, their processing, spectroscopic characterization, physical properties, an...