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Fundamental Aspects of Inert Gases in Solids
The NATO Advanced Research Workshop on Fundamental Aspects of Inert Gases in Solids, held at Bonas, France from 16-22 September 1990, was the fifth in a series of meetings that have been held in this topic area since 1979. The Consultants' Meeting in that year at Harwell on Rare Gas Behaviour in Metals and Ionic Solids was followed in 1982 by the Jiilich Inter national Symposium on Fundamental Aspects of Helium in Metals. Two smaller meetings have followed-a CECAM organised workshop on Helium Bubbles in Metals was held at Orsay, France in 1986 while in February 1989, a Topical Symposium on Noble Gases in Metals was held in Las Vegas as part of the large TMS/AIME Spring Meeting. As is well kn...
Handbook of Surfaces and Interfaces of Materials, Five-Volume Set
This handbook brings together, under a single cover, all aspects of the chemistry, physics, and engineering of surfaces and interfaces of materials currently studied in academic and industrial research. It covers different experimental and theoretical aspects of surfaces and interfaces, their physical properties, and spectroscopic techniques that have been applied to a wide class of inorganic, organic, polymer, and biological materials. The diversified technological areas of surface science reflect the explosion of scientific information on surfaces and interfaces of materials and their spectroscopic characterization. The large volume of experimental data on chemistry, physics, and engineeri...
Ion Beam Modification of Materials
This conference consisted of 15 oral sessions, including three plenary papers covering areas of general interest, 22 specialist invited papers and 51 contributed presentations as well as three poster sessions. There were several scientific highlights covering a diverse spectrum of materials and ion beam processing methods. These included a wide range of conventional and novel applications such as: optical displays and opto-electronics, motor vehicle and tooling parts, coatings tailored for desired properties, studies of fundamental defect properties, the production of novel (often buried) compounds, and treating biomedical materials. The study of nanocrystals produced by ion implantation in ...
Carbon Nanotubes: From Basic Research to Nanotechnology
The book comprises reviews on various topics of carbon nanotube research from specialists in the field, together with reports on on-going research. Both are intended to give a detailed picture of the remarkable properties of these one-dimensional nanostructures. Particular attention is paid to the synthesis, characterization, properties, and application of nanotubes. The book will be an indispensable introduction for the newcomers in the field as well as a valuable update for researchers in the field, for it contains the most recent developments.
Processing and Properties of Compound Semiconductors
Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The Willardson and Beer series, as it is widely known, has succeeded in producing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise that this tradition will be maintained and even expanded.
Carbon Nanotechnology
Nanotechnology is no longer a merely social talking point and is beginning to affect the lives of everyone. Carbon nanotechnology as a major shaper of new nanotechnologies has evolved into a truly interdisciplinary field, which encompasses chemistry, physics, biology, medicine, materials science and engineering. This is a field in which a huge amount of literature has been generated within recent years, and the number of publications is still increasing every year. Carbon Nanotechnology aims to provide a timely coverage of the recent development in the field with updated reviews and remarks by world-renowned experts. Intended to be an exposition of cutting-edge research and development rathe...
Deep Centers in Semiconductors
Examines several key semiconductor deep centers, all carefully chosen to illustrate a variety of essential concepts. A deep center is a lattice defect or impurity that causes very localized bound states and energies deep in the band gap. For each deep center chosen, a scientist instrumental in its development discusses the theoretical and experimental techniques used to understand that center. The second edition contains four new sections treating recent developments, including a chapter on hydrogen in crystalline semiconductors. Annotation copyright by Book News, Inc., Portland, OR
Periodic Nanostructures
These tiny structures could offer architectural designs for the cities of the future. The authors explore the foam-like carbon structures, which relate to ‘schwarzites’ and which are infinite periodic minimal surfaces of negative curvature. They show that the periodicity of close repeat units of such structures is evident not only in these formations but also in all of the carbon allotropes. The text provides literature and data on the field of nanostructure periodicity and the authors’ own results on nanostructure building and energy calculations.
Intrinsic Point Defects, Impurities, and Their Diffusion in Silicon
This book contains the first comprehensive review of intrinsic point defects, impurities and their complexes in silicon. Besides compiling the structures, energetic properties, identified electrical levels and spectroscopic signatures, and the diffusion behaviour from investigations, it gives a comprehensive introduction into the relevant fundamental concepts.
